Journal of the Korean Society for Heat Treatment (열처리공학회지)

The Korean Society for Heat Treatment (한국열처리공학회)
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Effect of Ti Buffer Layer Thickness on the Electrical and Optical Properties of In2O3/Ti bi-layered Films

Ti 완충층 두께에 따른 In2O3/Ti 적층박막의 전기적, 광학적 특성 변화

  • Moon, Hyun-Joo (chool of Materials Science and Engineering, University of Ulsan) ;
  • Jeon, Jae-Hyun (Dongkook lnd. CO., Ltd.) ;
  • Gong, Tae-Kyung (chool of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Daeil (chool of Materials Science and Engineering, University of Ulsan)
  • 문현주 (울산대학교 첨단소재공학부) ;
  • 전재현 (동국실업 주식회사) ;
  • 공태경 (울산대학교 첨단소재공학부) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2015.09.07
  • Accepted : 2015.10.12
  • Published : 2015.12.30
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Abstract

$In_2O_3/Ti$ bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, $In_2O_3$ 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of $3.0{\times}10^{-4}{\Omega}^{-1}$ than that of the $In_2O_3$ single layer films ($2.6{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the $In_2O_3\;90nm/TiO_2$ 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

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References

  1. J. Shin, Y. Cho and D. Choi : J. Kor. Inst. Met. & Mater. 47 (2009) 38-43.
  2. 서태원 : Co-Sputtering 방법으로 제작한 Si doped InSnO 산화물 박막 트랜지스터의 물성 연구, 단국대학교 석사 학위논문 (2013).
  3. S. H. Kim and D. Kim : Ceram. Int. 41 (2015) 2770. https://doi.org/10.1016/j.ceramint.2014.10.095
  4. Y. Abe and N. Ishiyama : J. Mater. Sci. Lett. 41 (2006) 7580. https://doi.org/10.1007/s10853-006-0844-7
  5. D. J. Kim, B. S. Kim and H. K. Kim : Thin Solid Films 547 (2013) 225. https://doi.org/10.1016/j.tsf.2013.02.073
  6. J. Jeon, T. K. Gong, Y. M. Kong, H. M. Lee and D Kim : Electron. Mater. Lett. 11 (2015) 481. https://doi.org/10.1007/s13391-014-4410-1
  7. J. H. Jeon, T. K. Gong, S. K. Kim, S. H. Kim, S. Y. Kim, D. H. Choi, D. I. Son and D. Kim : J. Alloys Compds, 639 (2015) 1. https://doi.org/10.1016/j.jallcom.2015.02.123
  8. Y. Wang, W. Tang, L. Zhang and J. Zhao : Thin Solid Films 565 (2014) 62. https://doi.org/10.1016/j.tsf.2014.06.046
  9. Y. S. Kim, J. H. Park and D. Kim : Vacuum 82 (2008) 574. https://doi.org/10.1016/j.vacuum.2007.08.011
  10. G. Haacke : J. Appl. Phys. 47 (1976) 4086. https://doi.org/10.1063/1.323240