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A Study of Impurity Deposition on ITO Substrate using RF Magnetron Sputtering

RF 마그네트론 스퍼터링을 이용한 ITO 기판에 불순물 증착에 관한 연구

  • Received : 2015.10.17
  • Accepted : 2015.11.27
  • Published : 2015.12.01

Abstract

In this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of $300^{\circ}C$ and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of $250^{\circ}C$.

Keywords

References

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