참고문헌
- Abrahams M S and Buiocchi C J (1974) Cross-sectional specimens for transmission electron microscopy. J. Appl. Phys. 45, 3315. https://doi.org/10.1063/1.1663778
- Barna A, Pecz B, and Menyhard M (1999) TEM sample preparation by ion milling/ amorphization. Micron 30, 267-276. https://doi.org/10.1016/S0968-4328(99)00011-6
- Chew N G and Cullis A G (1987) The preparation of transmission electron microscope specimens from compound semiconductors by ion milling. Ultramicroscopy 23, 175-198. https://doi.org/10.1016/0304-3991(87)90163-X
- Formanek P and Bugiel E (2006) Specimen preparation for electron holography of semiconductor devices. Ultramicroscopy 106, 365-375. https://doi.org/10.1016/j.ultramic.2005.11.002
- Giannuzzi L A and Stevie F A (1999) A review of focused ion beam milling techniques for TEM specimen preparation. Micron 30, 197-204. https://doi.org/10.1016/S0968-4328(99)00005-0
- John C B and Robert S (1984) The preparation of cross-section specimens for transmission electron microscopy. J. Electron Microsc. Tech. 1, 53-61. https://doi.org/10.1002/jemt.1060010106
- Midgley P A (2001) An introduction to off-axis electron holography. Micron 32, 167-184. https://doi.org/10.1016/S0968-4328(99)00105-5
- Mkhoyan K A, Baston P E, Cha J, Schaff W J, and Silcox J (2006) Direct determination of local lattice polarity in crystals. Science 312, 1354, supplementary material. https://doi.org/10.1126/science.1124511
- Okuno H, Takeguchi M, Mitsuishi K, Guo X J, and Furuya K (2008) Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis. J. Electron Microsc. 57, 1-5.
- Orloff J, Utlaut M, and Swanson L (2003) High Resolution Focused Ion Beams: FIB and Its Applications (Kluwer Academic/Plenum Publishers, New York).
- Preble E A, McLean H A, Kiesel S M, Miraglia P, Albrecht M, and Davis P F (2002) Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiC-based, cross-sectional TEM samples. Ultramicroscopy 92, 256-271.
- Stevie F A, Shane T C, Kahora P M, Hull R, Bahnck D, Kannan V C, and David E (1995) Applications of focused ion beams in microelectronics production, design and development. Surf. Interface Anal. 23, 61-68. https://doi.org/10.1002/sia.740230204
- Traeholt C, Wen J G, Svetchnikov V, Delsing V, and Zandbergen H W (1993) A reliable method of TEM cross section specimen preparation of YBCO films on various substrates. Physica C 306, 318-328.
- Yoo J H, Yang J M, Shaislamov U, Ahn C W, Hwang W J, Park J K, Park C M, Hong S B, Kim J J, and Shindo D (2008) Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside-ion milling. J. Electron Microsc. 57, 13-18.
피인용 문헌
- Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer vol.7, pp.11, 2017, https://doi.org/10.3390/nano7110385