DOI QR코드

DOI QR Code

Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method

  • Park, Ji Sook (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Hwa Jun (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Ryu, Sung Soo (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Sung Min (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Hwang, Hae Jin (Department of Materials Science and Engineering, Inha University) ;
  • Han, Yoon Soo (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology)
  • 투고 : 2015.08.29
  • 심사 : 2015.10.07
  • 발행 : 2015.11.30

초록

It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of $300^{\circ}C-700^{\circ}C$ and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded $Si_3N_4$ substrates for power devices to enable low carbon and oxygen contents in green tape samples.

키워드

참고문헌

  1. H. Huang, K. J. Winchester, A. Suvorova, B. R. Lawn, Y. Liu, X. Z. Hu, J. M. Dell, and L. Faraone, "Effect of Deposition Conditions on Mechanical Properties of Low-Temperature PECVD Silicon Nitride Films," Mater. Sci. Eng., A435-546 453-59 (2006).
  2. K. Watari, "High Thermal Conductivity Non-Oxide Ceramics," J. Ceram. Soc. Jpn., 109 [1] S7-16 (2001). https://doi.org/10.2109/jcersj.109.S7
  3. K. Hirao, Y. Zhou, H. Hyuga, T. Ohji, and D. Kusano, "High Thermal Conductivity Silicon Nitride Ceramics," J. Korean Ceram. Soc., 49 [4] 380-84 (2012). https://doi.org/10.4191/kcers.2012.49.4.380
  4. H. Miyazaki, K. Hirao, and Y. Yoshizawa, "Effects of MgO Addition on the Microwave Dielectric Properties of High Thermal-conductive Silicon Nitride Ceramics Sintered with Ytterbia as Sintering Additives," J. Eur. Ceram. Soc., 32 3297-301 (2012). https://doi.org/10.1016/j.jeurceramsoc.2012.04.025
  5. H. Miyazaki, K. Hirao, and Y. Yoshizawa, "Effect of Crystallization of Intergranular Glassy Phases on the Dielectric Properties of Silicon Nitride Ceramics," Mater. Sci. Eng. B, 148 257-60 (2008). https://doi.org/10.1016/j.mseb.2007.09.011
  6. J. S. Lee, J. H. Mun, B. D. Han, D. S. Park, and H. D. Kim, "Effect of Raw-Si Particle Size on the Mechanical Properties of Sintered RBSN," J. Korean Ceram. Soc., 38 [8] 740-48 (2001).
  7. K. H. Kwak, C. Kim, I. S. Han, and K. S. Lee, "Thermal Shock and Hot Corrosion Resistance of $Si_3N_4$ Fabricated by Nitrided Pressureless Sintering," J. Korean Ceram. Soc., 46 [5] 478-83 (2009). https://doi.org/10.4191/KCERS.2009.46.5.478
  8. X. Zhu, Y. Zhou, K. Hirao, T. Ishigaki, and Y. Sakka, "Potential Use of only $Yb_2O_3$ in Producing Dense $Si_3N_4$ Ceramics with High Thermal Conductivity by Gas Pressure Sintering," Sci. Technol. Adv. Mater., 11 [6] 1-11 (2010).
  9. S. K. Lee, J. D. Morreti, M. J. Readey, and B. R. Lawn, "Thermal Shock Resistance of Silicon Nitrides," J. Am. Ceram. Soc., 85 [1] 279-81 (2002). https://doi.org/10.1111/j.1151-2916.2002.tb00083.x
  10. M. J. Choi, T. W. Roh, C. Park, D. S. Park, and H. D. Kim, "The Study of Reaction Bonded Silicon Nitride Fabricated Under Static Nitrogen Pressure," J. Korean Ceram. Soc., 37 [5] 505-10 (2000).
  11. M. N. Rahaman and A. J. Moulson, "The Removal of Surface Silica and its Effect upon Silicon Nitridation Kinetics," J. Mater. Sci., 16 [8] 2319-21 (1981). https://doi.org/10.1007/BF00542400
  12. B. Lei, O. Babushkin, and R. Warren, "Nitridation Study of Reaction-bonded Silicon Nitride in situ by High Temperature X-Ray Diffraction," J. Eur. Ceram. Soc., 17 [9] 1113-18 (1997). https://doi.org/10.1016/S0955-2219(97)00016-2
  13. J. Y. Park and C. H. Kim, "The Microstructure of the Reaction - Bonded $Si_3N_4$ Formed in the Various Atmosphere," J. Korean Ceram. Soc., 23 [5] 61-6 (1986).
  14. S. J. Hong, H. C. Ahn, and D. J. Kim, "Reaction Bonded $Si_3N_4$ from Si-Polysilazane Mixture," J. Korean Ceram. Soc., 47 [6] 572-77 (2010). https://doi.org/10.4191/KCERS.2010.47.6.572
  15. K. N. Chon and C. H. Kim, "Microstructure Study on $Si_3N_4$ Formed by Various Nitridation Condition," J. Korean Ceram. Soc., 21 [3] 253-58 (1984).
  16. A. J. Moulson, "Reaction-bonded Silicon Nitride: its Formation and Properties," J. Mater. Sci., 14 1017-51 (1979). https://doi.org/10.1007/BF00561287
  17. Q. Zhang, X. Luo, W. Li, H. Zhuang, and D. Yan, "Tape Casting of AlN/glass Composites for LTCC Substrate," J. Mater. Sci., 38 [8] 1781-85 (2003). https://doi.org/10.1023/A:1023292113547
  18. W. S. Lee, C. H. Kim, M. S. Ha, S. J. Jeong, J. S. Song, and B. K. Ryu, "The Characterizations of Tape Casting for Low Temperature Sintered Microwave Ceramics Composite," J. Korean Ceram. Soc., 42 [2] 132-39 (2005). https://doi.org/10.4191/KCERS.2005.42.2.132
  19. B. T. Lee, J. H. Yoo, and H. D. Kim, "Fabrication of Silicon Nitride Ceramics Using Semiconductor-Waste-Si Sludge," Korean J. Mater. Res., 9 [12] 1170-75 (1999).
  20. B. R. Golla, J. W. Ko, J. M. Kim, and H. D. Kim, "Effect of Particle Size and Oxygen Content of Si on Processing, Microstructure and Thermal Conductivity of Sintered Reaction Bonded $Si_3N_4$," J. Alloys Compd., 595 60-6 (2014). https://doi.org/10.1016/j.jallcom.2014.01.131
  21. W. Y. Park, D. S. Park, H. D. Kim, and B. D. Han, "Sintering and Mechanical Properties of Silicon Nitride Prepared with a Low-Cost Silicon Nitride Powder," J. Korean Ceram. Soc., 38 [11] 987-92 (2001).

피인용 문헌

  1. Effects of Debinding Atmosphere on Properties of Sintered Reaction-bonded Si3N4 Prepared by Tape Casting Method vol.53, pp.6, 2016, https://doi.org/10.4191/kcers.2016.53.6.622
  2. Microstructure and Mechanical Properties of β-SiAlON Ceramics Fabricated Using Self-Propagating High-Temperature Synthesized β-SiAlON Powder vol.54, pp.4, 2017, https://doi.org/10.4191/kcers.2017.54.4.06
  3. Efficacy of Ag–CuO Filler Tape for the Reactive Air Brazing of Ceramic–Metal Joints vol.55, pp.5, 2018, https://doi.org/10.4191/kcers.2018.55.5.05
  4. Sintering Behavior and Properties of Reaction-Bonded Silicon Nitride vol.94, pp.2, 2021, https://doi.org/10.1134/s1070427221020038