References
- E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, Cambridge, 2006).
- M. H. Crawford, "LEDs for solid-state lighting: Performance challenges and recent advances," IEEE J. Select. Topics Quantum Electron. 15, 1028-1040 (2009). https://doi.org/10.1109/JSTQE.2009.2013476
-
D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar (20
${\bar{2}}{\bar{1}}$ ) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting," J. Disp. Technol. 9, 190-198 (2013). https://doi.org/10.1109/JDT.2012.2227682 - M. J. Cich, R. I. Aldaz, A. Chakraborty, A. David, M. J. Grundmann, A. Tyagi, M. Zhang, F. M. Steranka, and M. R. Krames, "Bulk GaN based violet light-emitting diodes with high efficiency at very high current density," Appl. Phys. Lett. 101, 223509 (2012). https://doi.org/10.1063/1.4769228
- J. J. Wierer, A. David, and M. M. Megens, "III-nitride photonic-crystal light-emitting diodes with high extraction efficiency," Nat. Photon. 3, 163-169 (2009). https://doi.org/10.1038/nphoton.2009.21
- T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, "Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate," Opt. Express 15, 6670-6676 (2007). https://doi.org/10.1364/OE.15.006670
- U. T. Schwarz, H. Braun, K. Kojima, Y. Kawakami, S. Nagahama, and T. Mukai, "Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells," Appl. Phys. Lett. 91, 123503 (2007). https://doi.org/10.1063/1.2786602
- A. Khan, K. Balakrishnan, and T. Katona, "Ultraviolet light-emitting diodes based on group three nitrides," Nat. Photon. 2, 77-84 (2008). https://doi.org/10.1038/nphoton.2007.293
- J. Vuckovic, M. Loncar, and A. Scherer, "Surface plasmon enhanced light-emitting diode," IEEE J. Quantum Electron. 36, 1131-1144 (2000). https://doi.org/10.1109/3.880653
- K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, "Surface-plasmon-enhanced light emitters based on InGaN quantum wells," Nat. Mater. 3, 601-605 (2004). https://doi.org/10.1038/nmat1198
- K. Okamoto, I. Niki, A. Scherer, Y. Narukawa, T. Mukai, and Y. Kawakami, "Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy," Appl. Phys. Lett. 87, 071102 (2005). https://doi.org/10.1063/1.2010602
- M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, "Surface-plasmon-enhanced light-emitting diodes," Adv. Mater. 20, 1253-1257 (2008). https://doi.org/10.1002/adma.200701130
- C.-H. Lu, C.-C. Lan, Y.-L. Lai, Y.-L. Li, and C.-P. Liu, "Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array," Adv. Funct. Mater. 21, 4719-4723 (2011). https://doi.org/10.1002/adfm.201101814
-
L.-W. Jang, D.-W. Jeon, M. Kim, J.-W. Jeon, A. Y. Polyakov, J.-W. Ju, S.-J. Lee, J.-H. Baek, J.-K. Yang, I.-H. Lee, "Investigation of optical and structural stability of localized surface plasmon mediated light-emitting diodes by Ag and
$Ag/SiO_2$ nanoparticles," Adv. Func. Mater. 22, 2728-2734 (2012). https://doi.org/10.1002/adfm.201103161 - Y. Xu, J. Vuckovic, R. Lee, O. Painter, A. Scherer, and A. Yariv, "Finite-difference time-domain calculation of spontaneous emission lifetime in a microcavity," J. Opt. Soc. Am. B 16, 465-474 (1999). https://doi.org/10.1364/JOSAB.16.000465
- N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, "Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes," Appl. Phys. Lett. 86, 111101 (2005). https://doi.org/10.1063/1.1875765
-
H. Masui, T. J. Baker, M. Iza, H. Zhong, S. Nakamura, and S. P. DenBaars, "Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (11
${\bar{2}}$ 2)-plane GaN," J. Appl. Phys. 100, 113109 (2006). https://doi.org/10.1063/1.2382667 - M. F. Schubert, S. Chhajed, J. K. Kim, and E. F. Schubert, "Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates," Appl. Phys. Lett. 91, 051117 (2007). https://doi.org/10.1063/1.2757594
- T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, "Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes," Appl. Phys. Lett. 97, 171105 (2010). https://doi.org/10.1063/1.3506585
- Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, "Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode," Opt. Express 19, A914-A929 (2011). https://doi.org/10.1364/OE.19.00A914
- Y. Kuo, W. Y. Chang, H. S. Chen, Y. W. Kiang, and C. C. Yang, "Surface plasmon coupling with a radiating dipole near an Ag nanoparticle embedded in GaN," Appl. Phys. Lett. 102, 161103 (2013). https://doi.org/10.1063/1.4803042
- Y. Kuo, W. Y. Chang, H. S. Chen, Y. R. Wu, C. C. Yang, and Y. W. Kiang, "Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode," J. Opt. Soc. Am. B 30, 2599-2606 (2013). https://doi.org/10.1364/JOSAB.30.002599
- S. Jiang, Z. Hu, Z. Chen, X. Fu, X. Jiang, Q. Jiao, T. Yu, and G. Zhang, "Resonant absorption and scattering suppression of localized surface plasmons in Ag particles on green LED," Opt. Express 21, 12100-12110 (2013). https://doi.org/10.1364/OE.21.012100
- A. Taflove and S. Hagness, Computational Electrodynamics: The Finite-Difference Time-Domain Method (Artech House Publishers, Boston, USA, 2000).
- http://www.lumerical.com/
-
S.-K. Moon and J.-K. Yang, "Effect of number of
$Ag/SiO_2$ core-shells on quantum efficiency of InGaN/GaN light emitting diodes," in preparation (2014). - K. L. Kelly, E. Coronado, L. L. Zhao, and G. C. Schatz, "The optical properties of metal nanoparticles: The influence of size, shape, and dielectric environment," J. Phys. Chem. B 107, 668-677 (2003).
- H. Mertens, A. F. Koenderink, and A. Polman, "Plasmon-enhanced luminescence near noble-metal nanospheres: Comparison of exact theory and an improved Gersten and Nitzan model," Phys. Rev. B 76, 115-123 (2007).
- Y. S. Kim, P. T. Leung, and T. F. George, "Classical decay rates for molecules in the presence of a spherical surface: a complete treatment," Surf. Sci. 195, 1-14 (1988). https://doi.org/10.1016/0039-6028(88)90776-5
- G. Colas des Francs, A. Bouhelier, E. Finot, J. C. Weeber, A. Dereux, C. Girard, and E. Dujardin, "Fluorescence relaxation in the near-field of a mesoscopic metallic particle: Distance dependence and role of plasmon modes," Opt. Express 16, 17654-17666 (2008). https://doi.org/10.1364/OE.16.017654
- Bharadwaj and L. Novotny, "Spectral dependence of single molecule fluorescence enhancement," Opt. Express 15, 14266-14274 (2007). https://doi.org/10.1364/OE.15.014266
- I. Abram, I. Rovert, and R. Kuszelwicz, "Spontaneous emission control in semiconductor microcavities with metallic or Bragg mirrors," IEEE J. Quantum Electron. 34, 71-76 (1998). https://doi.org/10.1109/3.655009
- Z. Zhang, D. Lim, and R. E. Diaz, "Image theory for plasmon-modified luminescence near nanospheres," Proc. SPIE 8595, 859508 (2013).
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