한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제27권10호
  • /
  • Pages.613-617
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  • 2014
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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전하 불균형 효과를 고려한 Super Junction MOSFET 개발에 관한 연구

Developing of Super Junction MOSFET According to Charge Imbalance Effect

  • Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
  • 투고 : 2014.07.24
  • 심사 : 2014.09.01
  • 발행 : 2014.10.01
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초록

This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.

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참고문헌

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