Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Temperature vs. Resistance Characteristics by Dopants of VO2 Thick-Film Critical Temperature Sensors

불순물 첨가에 따른 VO2 후막 급변온도센서의 온도-저항 특성

  • Choi, Jung Bum (Department of Materials Science and Engineering, University of Seoul) ;
  • Kang, Chong Yun (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Yoon, Seok-Jin (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Yoo, Kwang Soo (Department of Materials Science and Engineering, University of Seoul)
  • 최정범 (서울시립대학교 신소재공학과) ;
  • 강종윤 (한국과학기술연구원 전자재료연구센터) ;
  • 윤석진 (한국과학기술연구원 전자재료연구센터) ;
  • 유광수 (서울시립대학교 신소재공학과)
  • Received : 2014.08.18
  • Accepted : 2014.09.19
  • Published : 2014.09.30
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Abstract

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

Keywords

References

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