Journal of Welding and Joining

The Korean Welding and Joining Society (대한용접접합학회)
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Technical Trend of TSV(Through Silicon Via) Filling for 3D Wafer Electric Packaging

3D 웨이퍼 전자접합을 위한 관통 비아홀의 충전 기술 동향

  • Ko, Young-Ki (Micro-Joining Center, Korea Institute of Industrial Technology (KITECH)) ;
  • Ko, Yong-Ho (Micro-Joining Center, Korea Institute of Industrial Technology (KITECH)) ;
  • Bang, Jung-Hwan (Micro-Joining Center, Korea Institute of Industrial Technology (KITECH)) ;
  • Lee, Chang-Woo (Micro-Joining Center, Korea Institute of Industrial Technology (KITECH))
  • 고영기 (한국생산기술연구원 마이크로조이닝센터) ;
  • 고용호 (한국생산기술연구원 마이크로조이닝센터) ;
  • 방정환 (한국생산기술연구원 마이크로조이닝센터) ;
  • 이창우 (한국생산기술연구원 마이크로조이닝센터)
  • Received : 2014.06.09
  • Accepted : 2014.06.24
  • Published : 2014.06.30
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Abstract

Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

Keywords

References

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