참고문헌
- E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science 308, 1274-1278 (2005). https://doi.org/10.1126/science.1108712
- S. Nakamura, "Current status of GaN-based solid-state lighting," MRS Bulletin 34, 101-107 (2009). https://doi.org/10.1557/mrs2009.28
- P. Niu, Y. Li, X. Li, H. Liu, H. Tian, T. Gao, and G. Yang, "Enhancing the light extraction efficiency of GaN-based LEDs," Proc. SPIE 6828, 682811 (2007).
- A. N. Noemaun, F. W. Mont, G.-B. Lin, J. Cho, E. F. Schubert, G. B. Kim, C. Sone, and J. K. Kim, "Optically functional surface composed of patterned graded-refractiveindex coatings to enhance light-extraction of GaInN lightemitting diodes," J. Appl. Phys. 110, 054510 (2011). https://doi.org/10.1063/1.3632072
- S. Noda, M. Fujita, and T. Asano, "Spontaneous-emission control by photonic crystals and nanocavities," Nat. Photon. 1, 449-458 (2007). https://doi.org/10.1038/nphoton.2007.141
- J. Y. Kim, M. K. Kwon, K. S. Lee, S. J. Park, S. H. Kim, and K. D. Lee, "Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal," Appl. Phys. Lett. 91, 181109 (2007). https://doi.org/10.1063/1.2804005
- J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett. 84, 3885 (2004). https://doi.org/10.1063/1.1738934
- A. David, H. Benisty, and C. Weisbuch, "Optimization of light-diffracting photonic-crystals for high extraction efficiency LEDs," IEEE J. Display Technol. 3, 133-148 (2007). https://doi.org/10.1109/JDT.2007.896736
- J.-M. Lee, C. Huh, D.-J. Kim, and S.-J. Park, "Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes," Semicond. Sci. Technol. 18, 530-534 (2003). https://doi.org/10.1088/0268-1242/18/6/323
- Q. Fan, S. Chevtchenko, X. Ni, S.-J. Cho, F. Yun, and H. Morkoc, "Reactive ion etch damage on GaN and its recovery," J. Vac. Sci. Technol. B 24, 1197-1201 (2006).
- S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, C. Trager-Cowan, F. Sweeney, and E. Alves, "Compositional pulling effects in InxGa1-xN/GaN layers: A combined depthresolved cathodoluminescence and Rutherford backscattering/ channeling study," Phys. Rev. B 64, 2053111 (2001).
- S. Sonderegger, E. Feltin, M. Merano, A. Crottini, J. F. Carlin, R. Sachot, B. Deveaud, N. Grandjean, and J. D. Ganiere, "High spatial resolution picosecond cathodoluminescence of InGaN quantum wells," Appl. Phys. Lett. 89, 232109-232111 (2006). https://doi.org/10.1063/1.2397562
- D. H. Long, I. K. Hwang, and S. W. Ryu, "Design optimization of photonic crystal structure for improved light extraction of GaN LED," IEEE J. Select. Topics Quantum Electron. 15, 1257-1263 (2009). https://doi.org/10.1109/JSTQE.2009.2014471
- B. Wang, Y. Jin, and S. He, "Effects of disorder in a photonic crystal on the extraction efficiency of a lightemitting diode," J. Appl. Phys. 106, 014508 (2009). https://doi.org/10.1063/1.3159650
- J. D. Joannopoulos, S. G. Johnson, J. N. Winn, and R. D. Meade, Photonic Crystals-Molding The Flow of Light, 2nd ed. (Princeton University Press, 2008), Chapter 5.
- J. S. Lee, J. Lee, S. Kim, and H. Jeon, "Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDs," Phys. Stat. Sol. C 4, 2625-2628 (2007). https://doi.org/10.1002/pssc.200674806
- H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, "Effect of periodic deflector embedded in InGaN/GaN light emitting diode," Appl. Phys. Lett. 90, 261117 (2007). https://doi.org/10.1063/1.2752777
- Y.-T. Moon, D.-J. Kim, J.-S. Park, J.-T. Oh, J.-M. Lee, and S.-J. Park, "Recovery of dry-etch induced surface damage on Mg-doped GaN by NH3 ambient thermal annealing," J. Vac. Sci. Technol. B 22, 489-491 (2004). https://doi.org/10.1116/1.1645882
- D. Zhuang and J. H. Edgar, "Wet etching of GaN, AlN, and SiC: A review," Mater. Sci. Eng. R 48, 1-46 (2005). https://doi.org/10.1016/j.mser.2004.11.002
- H. M. Ng, N. G. Weimann, and A. Chowdhury, "GaN nanotip pyramids formed by anisotropic etching," J. Appl. Phys. 94, 650 (2003). https://doi.org/10.1063/1.1582233