전기학회논문지P (The Transactions of the Korean Institute of Electrical Engineers P)

  • 제63권1호
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  • Pages.46-49
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  • 2014
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  • 1229-800X(pISSN)
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  • 2586-7792(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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루테늄 전극위에 증착된 PZT 박막의 전기적 및 강유전 특성

The Electric and Ferroelectric of Pb(Zr0.52Ti0.48)O3 Thin Films Deposited on Ruthenium Electrodes

  • 투고 : 2013.11.05
  • 심사 : 2013.11.29
  • 발행 : 2014.03.01
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초록

$Pb(Zr_{0.52}Ti_{0.48})O_3(PZT)$ thin films deposited on $Ru/RuO_2$ bottom electrode that grown for in-situ progress used rf magnetron sputtering method. We investigated the dependence of the crystalline and electrical properties in the way of capacitors PZT thin films. Our results show that all PZT films indicated polycrystalline perovskite structure with preferred orientation (110) and no pyrochlore phase is observed. The electric properties of the Ru improved with increasing Ru thin films thickness. A well-fabricated Ru/PZT/Ru (100 nm) /$RuO_2$ capacitor showed a leakage current density in the order of $2.03{\times}10^{-7}$ $A/cm^2$ as a 50 kV/cm, a remnant polarization (Pr) of 9.22 ${\mu}C/cm^2$, and a coercive field (-EC) of -32.22 kV/cm. The results show that $Ru/Ru/RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

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참고문헌

  1. Yi Yin, Hui Ye, Wenbo Zhan, Liang Hong, Haimin Ma, and Jian Xu, "Preparation and characterization of unimorph actuators based on piezoelectric $Pb(Zr_{0.52}Ti_{0.48})O_3 $materials", Sensors and Actuators A: Physical, Vol. 171, Issue 2, pp. 332-339, 2011. https://doi.org/10.1016/j.sna.2011.09.012
  2. A. I. Mardare, C. C. Mardare, and E. Joanni, "Bottom electrode crystallization of PZT thin films for ferroelectric capacitors", Journal of the European Ceramic Society, Vol. 25, pp. 735-741, 2005. https://doi.org/10.1016/j.jeurceramsoc.2003.12.031
  3. C. Manke, O. Boissiere, U. Weber, G. Barbar, P.K. Baumann, J. Lindner, M. Tapajna, and K. Fro¨hlich, "Growth of Ru/$RuO_2$ layers with atomic vapor deposition on plain wafers and into trench structures", Microelectronic Engineering, Vol. 83, pp. 2277-2281, 2006. https://doi.org/10.1016/j.mee.2006.10.018
  4. A. Huang, and S.R. Shannigrahi, "Effect of bottom electrode and resistive layer on the dielectric and ferroelectric properties of sol-gel derived $BiFeO_3$ thin films", Journal of Alloys and Compounds, Vol. 39, Issue 1, pp. 219-225, 2013.
  5. L.W. Martin, Y.-H. Chu, and R. Ramesh, "Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films", Materials Science and Engineering: R: Reports, Vol. 68, Issues 4-6, pp. 89-133, 2010. https://doi.org/10.1016/j.mser.2010.03.001
  6. Kyubong Jung, Takeshi Momose, and Yukihiro Shimogaki, "Strontium ruthenium oxide deposition in supercritical carbon dioxide using a closed reactor system", The Journal of Supercritical Fluids, Vol. 79, pp. 244-250, 2013. https://doi.org/10.1016/j.supflu.2013.03.008
  7. E Bouyssou, P Leduc, G Guegan and R Jerisian, "Leakage current conduction in $IrO_2$/PZT/Pt structures", Journal of Physics: Conference Series, Vol. 10, pp. 317-320, 2005.