JSTS:Journal of Semiconductor Technology and Science

  • 제14권1호
  • /
  • Pages.117-123
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  • 2014
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer

  • Hazra, Purnima (Department of Electronics Engineering, Indian Institute of Technology(Banaras Hindu University)) ;
  • Singh, S.K. (Department of Electrical Engineering, Mewar University) ;
  • Jit, S. (Department of Electronics Engineering, Indian Institute of Technology(Banaras Hindu University))
  • 투고 : 2013.07.31
  • 심사 : 2013.10.23
  • 발행 : 2014.02.28
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초록

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

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참고문헌

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