JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Nano-power Switched-capacitor Voltage Reference Using MOS Body Effect for Applications in Subthreshold LSI

  • Zhang, Hao (Graduate School of Information, Production and System, Waseda University) ;
  • Huang, Meng-Shu (Graduate School of Information, Production and System, Waseda University) ;
  • Zhang, Yi-Meng (Graduate School of Information, Production and System, Waseda University) ;
  • Yoshihara, Tsutomu (Graduate School of Information, Production and System, Waseda University)
  • Received : 2013.01.25
  • Accepted : 2013.11.20
  • Published : 2014.02.28
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Abstract

A nano-power CMOS voltage reference is proposed in this paper. Through a combination of switched-capacitor technology with the body effect in MOSFETs, the output voltage is defined as the difference between two gate-source voltages using only a single PMOS transistor operated in the subthreshold region, which has low sensitivity to the temperature and supply voltage. A low output, which breaks the threshold restriction, is produced without any subdivision of the components, and flexible trimming capability can be achieved with a composite transistor, such that the chip area is saved. The chip is implemented in $0.18{\mu}m$ standard CMOS technology. Measurements show that the output voltage is approximately 123.3 mV, the temperature coefficient is $17.6ppm/^{\circ}C$, and the line sensitivity is 0.15 %/V. When the supply voltage is 1 V, the supply current is less than 90 nA at room temperature. The area occupation is approximately $0.03mm^2$.

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References

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