JSTS:Journal of Semiconductor Technology and Science

  • 제14권1호
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  • Pages.53-60
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  • 2014
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Blistering Induced Degradation of Thermal Stability Al2O3 Passivation Layer in Crystal Si Solar Cells

  • 투고 : 2013.08.25
  • 심사 : 2013.12.30
  • 발행 : 2014.02.28
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초록

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

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참고문헌

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피인용 문헌

  1. Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack vol.67, pp.6, 2015, https://doi.org/10.3938/jkps.67.995
  2. Understanding Surface Treatment and ALD AlOx Thickness Induced Surface Passivation Quality of c-Si Cz Wafers vol.7, pp.5, 2017, https://doi.org/10.1109/JPHOTOV.2017.2717040
  3. for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE vol.214, pp.2, 2016, https://doi.org/10.1002/pssa.201600727