JSTS:Journal of Semiconductor Technology and Science

  • 제14권1호
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  • Pages.29-33
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  • 2014
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Numerical Analysis Using Finite Element Method On Phosphorescent Organic Light Emitting Diodes

  • Hwang, Y.W. (Department of Electrical Engineering, Inha University) ;
  • Lee, H.G. (Department of Electrical Engineering, Inha University) ;
  • Won, T.Y. (Department of Electrical Engineering, Inha University)
  • 투고 : 2013.08.23
  • 심사 : 2013.11.28
  • 발행 : 2014.02.28
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초록

In this paper, we report our numerical simulation on the electronic-optical properties of the phosphorescent organic light emitting diodes (PHOLEDs) devices. In order to calculate the electrical and optical characteristics such as the transport behavior of carriers, recombination kinetics, and emission property, we undertake the finite element method (FEM). Our model includes Poisson's equation, continuity equation to account for behavior of electrons and holes and the exciton continuity/transfer equation. We demonstrate that the refractive indexes of each material affect the emission property and the barrier height of the interface influences the behavior of charges and the generation of exciton.

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참고문헌

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