References
- K. N. Chen, L. Krusin-Elbaum, D. M. Newns, B. G. Elmegreen, R. Cheek, N. Rana, A. M. Young, S. J. Koester, and C. Lam, IEEE Electron Device Lett. 29, 131 (2008). https://doi.org/10.1109/LED.2007.912016
- S. -Y. Lee, S. Jung, S. -M. Yoon, and Y. S. Park, J. Non-Cryst. Solids 358, 2405 (2012). https://doi.org/10.1016/j.jnoncrysol.2011.12.014
- T. Lowrey, W. Parkinson, and G. Wicker, US Patent US 8379439 B2, 2013.
- S. Y. Lee, Y. S. Park, S. M. Yoon, S. Jung, S. H. Cheon, and B. G. Yu, US Patent US 20100148141 A1, 2010.
- J. Wang, R. Katz, J. Sun, B. Cronquist, J. McCollum, T. Speed, and W. Plants, IEEE Trans. Nucl. Sci. 46, 1728 (1999). https://doi.org/10.1109/23.819146
- C. Auricchio, M. Borgatti, A. Martino, A. Maurelli, R. Pelliconi, and P. Rolandi, Proc. of European Solid State Device Research Conf. 211 (2003).
- S. -Y. Lee and Y. S. Park, J. Korean Vac. Soc. 19, 155 (2010). https://doi.org/10.5757/JKVS.2010.19.2.155
- Y. M. Lee, K. Kim, H. -J. Shin, M. -C. Jung, and Y. Qi, J. Korean Vac. Soc. 21, 348 (2012). https://doi.org/10.5757/JKVS.2012.21.6.348
- Y. -H. Huang, C. -H. Hang, Y. -J. Huang, and T. -E. Hsieh, J. Alloys Compd. 580, 449 (2013). https://doi.org/10.1016/j.jallcom.2013.06.129
- Y. Lai, Adv. Sci. Lett. 9, 523 (2012). https://doi.org/10.1166/asl.2012.2621
- H. J. Kroezen, G. Eising, G. Ten Brink, G. Palasantzas, B. J. Kooi, and A. Pauza, Appl. Phys. Lett. 100, 094106 (2012). https://doi.org/10.1063/1.3691179
- P. -C. Chang, H. -W. Huang, C. -C. Chang, S. -C. Chang, M. -J. Tsai, and T. -S. Chin, Thin Solid Films 544, 107 (2013). https://doi.org/10.1016/j.tsf.2013.04.101
- M. Anbarasu, M. Wimmer, G. Bruns, M. Salinga, and M. Wuttig, Appl. Phys. Lett. 100, 143505 (2012). https://doi.org/10.1063/1.3700743
- E. Morales-Sanchez, E. F. Prokhorov, J. Gonzalez-Hernandez, and A. Mendoza-Galvan, Thin Solid Films 471, 243 (2005). https://doi.org/10.1016/j.tsf.2004.06.141
- Z. Yang and P. Lucasw, J. Am. Ceram. Soc. 92, 2920 (2009). https://doi.org/10.1111/j.1551-2916.2009.03323.x
- S. Prakash, S. Asokan, and D. B. Ghare, IEEE Electron Device Lett. 18, 45 (1997). https://doi.org/10.1109/55.553039