전기전자학회논문지 (Journal of IKEEE)

  • 제18권4호
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  • Pages.509-516
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  • 2014
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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고속 SDRAM에서 실시간 Matrix형 CRC

Real-time Matrix type CRC in High-Speed SDRAM

  • 투고 : 2014.10.20
  • 심사 : 2014.12.03
  • 발행 : 2014.12.31
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⟨ 이전 논문 다음 논문 ⟩

초록

고속동작용 반도체 메모리 제품에 추가된 CRC는 DDR4와 같은 제품에서 데이타의 신뢰도를 증가시킨다. 기존의 CRC 방식은 부가회로 면적이 커고 많은 지연시간이 발생되어, CRC 계산을 위한 내부 타이밍 마진의 부족을 유발한다. 따라서 메모리 제품 설계에서 데이터 입출력 설계에 심각한 문제를 유발한다. 본 논문에서는 오류검출 회로설계를 위한 CRC 코드 방식을 제시하고, 실시간 matrix형 CRC 방법을 제안하였다. 데이터 비트오류 발생시 오류여부를 실시간으로 시스템에 피드백(feedback) 가능하도록 하였다. 제안한 방식은 기존방식(XOR 6단, ATM-8 HEC코드)대비 부가회로 면적을 60% 개선할 수 있으며, XOR 단 지연시간을 33%개선 할 수 있다. 또한 실시간 에러 검출 방식은 전체 데이터 비트(UI0~UI9)에 대해 평균 50% 이상 오류 검출 속도를 향상시켰다.

CRC feature in a high-speed semiconductor memory devices such as DDR4/GDDR5 increases the data reliability. Conventional CRC method have a massive area overhead and long delay time. It leads to insufficient internal timing margins for CRC calculation. This paper, presents a CRC code method that provides error detection and a real-time matrix type CRC. If there are errors in the data, proposed method can alert to the system in a real-time manner. Compare to the conventional method(XOR 6 stage ATM-8 HEC code), the proposing method can improve the error detection circuits up to 60% and XOR stage delay by 33%. Also the real-time error detection scheme can improve the error detection speed to agerage 50% for the entire data bits(UI0~UI9).

키워드

참고문헌

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