마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제21권4호
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  • Pages.41-44
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  • 2014
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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PLD 기법으로 성장된 n형 TiO2에서 Nb 도너의 활성화 에너지

The activation Energy of the Niobium donor in n-type TiO2 film grown by Pulsed Laser Deposition

  • Bae, Hyojung (School of Applied Chemical Engineering, Chonnam National University) ;
  • Ha, Jun-Seok (School of Applied Chemical Engineering, Chonnam National University) ;
  • Park, Seung Hwan (Saint-Gobain Research Corporate Limited)
  • 투고 : 2014.12.11
  • 심사 : 2014.12.22
  • 발행 : 2014.12.30
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초록

본 연구에서는 $TiO_2$에 나이오븀 (Nb) 도펀트가 주입되었을 때의 활성화 에너지를 홀 효과 측정 시스템과 온도에 따른 photoluminescence (PL) 실험을 통하여 살펴보았다. Nb 이 도핑 된 n형 아나타제 $TiO_2$ 박막은 pulsed laser deposition (PLD) 기법으로 $SrTiO_3$기판에 성장되었다. 측정 결과, Nb 도너의 활성화 에너지 값은 홀 효과 측정에서는 14.52 meV, PL 측정에서는 6.72 meV로 다소 차이를 보였다. 이 결과는 기존의 어셉터 물질의 활성화 에너지들과는 차이를 나타내고 있으며, 향후 본 연구와 같은 shallow 도너 준위의 활성화 에너지 연구에 대한 더 많은 연구가 필요할 것으로 판단된다.

In this paper, we will investigate the activation energies of Nb for $TiO_2$ using Hall effect measurement and photoluminescence (PL) system. Nb-doped $TiO_2$ thin film was grown on $SrTiO_3$ substrate by pulsed laser deposition (PLD) technique. After measurements, activation energies of niobium donor were 14.52 meV in Hall effect measurement, and 6.72 meV in PL measurement, respectively. These results showed different tendencies which are measured from the samples with acceptor materials. Therefore, it is thought that more research on activation energies for dopants of shallow donor level is expected.

키워드

참고문헌

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