JSTS:Journal of Semiconductor Technology and Science

  • 제13권5호
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  • Pages.516-521
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  • 2013
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Study of Switching and Kirk Effects in InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors

  • Mohiuddin, M. (School of Electronics Engineering, Kyungpook National University) ;
  • Sexton, J. (School of Electronics Engineering, Kyungpook National University) ;
  • Missous, M. (School of Electronics Engineering, Kyungpook National University)
  • 투고 : 2013.04.05
  • 심사 : 2013.05.13
  • 발행 : 2013.10.31
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초록

This paper investigates the two dominant but intertwined current blocking mechanisms of Switching and Kirk Effect in pure ternary InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors (DHBTs). Molecular Beam Epitaxy (MBE) grown, lattice-matched samples have been investigated giving substantial experimental results and theoretical reasoning to explain the interplay between these two effects as the current density is increased up to and beyond the theoretical Kirk Effect limit for devices of emitter areas varying from $20{\times}20{\mu}m^2$ to $1{\times}5{\mu}m^2$. Pure ternary InAlAs/InGaAs/InAlAs DHBTs are ideally suited for such investigations because, unless corrective measures are taken, these devices suffer from appreciable current blocking effect due to their large conduction band discontinuity of 0.5 eV and thus facilitating the observation of the two different physical phenomena. This enhanced understanding of the interplay between the Kirk and Switching effect makes the DHBT device design and optimization process more effective and efficient.

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참고문헌

  1. M. Yee and P. A. Houston, "High current effects in double heterojunction bipolar transistors," Semiconductor Science and Technology, vol. 20, pp. 412-417, May 2005. https://doi.org/10.1088/0268-1242/20/5/015
  2. C. Nguyen, et al., "AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel basecollector design for power applications," IEEE Electron Device Letters, vol. 17, pp. 133-135, 1996. https://doi.org/10.1109/55.485191
  3. W. R. McKinnon, et al., "Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors," Journal of Vacuum Science & Technology A-Vacuum Surfaces and Films, vol. 16, pp. 846-849, 1998. https://doi.org/10.1116/1.581020
  4. C. H. Huang, et al., "Relation between the Collector Current and the 2-Dimensional Electron- Gas Stored in the Base-Collector Heterojunction Notch of InAlAs/InGaAs/InAlGaAs DHBTs," Solid-State Electronics, vol. 38, pp. 1765-1770, 1995. https://doi.org/10.1016/0038-1101(94)00296-R
  5. T. Iwai, et al., "1.5V low-voltage microwave power performance of InAlAs/InGaAs double heterojunction bipolar transistors," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 36, pp. 648-651, 1997. https://doi.org/10.1143/JJAP.36.648
  6. M. Mohiuddin, et al., "Elimination of Current Blocking in Ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors," IEEE Transactions on Electron Devices, vol. 57, pp. 3340-3347, 2010. https://doi.org/10.1109/TED.2010.2074203
  7. S. P. McAlister, et al., "Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors," Journal of Applied Physics, vol. 82, pp. 5231-5234, 1997. https://doi.org/10.1063/1.366388
  8. F. Capasso, et al., "Doping Interface Dipoles - Tunable Heterojunction Barrier Heights and Band- Edge Discontinuities by Molecular-Beam Epitaxy," Applied Physics Letters, vol. 46, pp. 664-666, 1985. https://doi.org/10.1063/1.95521
  9. D. Ritter, et al., "Bistable Hot-Electron Transport in InP/GaInAs Composite Collector Heterojunction Bipolar-Transistors," Applied Physics Letters, vol. 61, pp. 70-72, 1992. https://doi.org/10.1063/1.107672
  10. K. Hess, et al., "New Ultrafast Switching Mechanism in Semiconductor Heterostructures," Journal of Applied Physics, vol. 60, pp. 3775-3777, 1986. https://doi.org/10.1063/1.337540
  11. C. T. Kirk, "A theory of transistor cutoff frequency (fT) falloff at high current densities," IRE Transactions on Electron Devices, vol. 9, pp. 164- 174, March 1962 1962. https://doi.org/10.1109/T-ED.1962.14965
  12. P. J. Zampardi and D. S. Pan, "Delay of Kirk effect due to collector current spreading in heterojunction bipolar transistors," IEEE Electron Device Letters, vol. 17, pp. 470-472, 1996. https://doi.org/10.1109/55.537078
  13. B. Mazhari and H. Morkoc, "Effect of Collector- Base Valence-Band Discontinuity on Kirk Effect in Double-Heterojunction Bipolar-Transistors," Applied Physics Letters, vol. 59, pp. 2162-2164, 1991. https://doi.org/10.1063/1.106115
  14. M. Mohiuddin, et al., "Temperature studies of InAlAs/InGaAs/InAlAs double heterojunction bipolar transistors with no current blocking," Semiconductor Science and Technology, vol. 25, p. 075002, 2010. https://doi.org/10.1088/0268-1242/25/7/075002
  15. ATLAS manual: SILVACO International, 4701 Patrick Henry Drive, Bldg. 1, Santa Clara, USA, 2005.
  16. B. G. Streetman, Solid State Electronic Devices: Prentice Hall, 2005, pp. 235.
  17. S. P. McAlister, et al., "Hysteresis in the Switching of Hot-Electrons in InP/InGaAs Double- Heterojunction Bipolar-Transistors," Journal of Applied Physics, vol. 76, pp. 2559-2561, Aug 1994. https://doi.org/10.1063/1.358456
  18. W. Liu, Handbook of III-V Heterojunction Bipolar Transistors: John Wiley & Sons, Inc., 1998, pp. 74.