참고문헌
- L. Esaki and R. Tsu, "Superlattice and negative differential conductivity in semiconductors," IBM J. Res. and Dev., Vol.14, No.1, pp.61-65, Jan., 1970. https://doi.org/10.1147/rd.141.0061
- P. Ho, P. C. Chao, K. H. G. Duh, A. A. Jabra, J. M. Ballingall and P. M. Smith, "Extremely high gain, low noise InA1As/InGaAs HEMTs grown by MBE," IEDM 1988, Technical Digest, 11-14, pp. 184-186, Dec., 1988.
- U. K. Mishra, A. S. Brown, S. E. Rosenbaum, M. J. Delaney, S. Vaughn and K. White, "Noise performance of submicrometer AlInAs-GaInAs HEMTs," IEEE Trans. on Electron Dev., Vol.35, No.12, pp.2441-2442, Dec., 1988.
- E. Sano, "InP HEMT lightwave communication ICs for 40 Gbit/s and beyond," IPRM 1999, 11th IEEE International Conference on Indium Phosphide and Related Materials, 1999, 16-20, pp.299-304, May, 1999.
- Y. Umeda, T. Enoki, T. Otsuji, T. Suemitsu, H. Yokoyama and Y. Ishii, "Ultrahigh-Speed IC technologies using InP based HEMTs for future optical communication systems," IEICE Trans. on Electronics, Vol.E82-C, No.3, pp.409-418, Mar., 1999.
- T. Enoki, H. Yokoyama, Y. Umeda and T. Otsuji, "Ultra High speed integrated circuits using InP based HEMTs," Jpn. J. Appl. Phys., Vol.37, No.3B, pp.1359-1364, Mar., 1998. https://doi.org/10.1143/JJAP.37.1359
-
Y. Kwon, D. Pavlidis, T. L. Brock and D. C. Streit, "Experimental and theoretical characteristics of high performance pseudomorphic double heterojunction
$InAlAs/In_{0.7}Ga_{0.3}As/InAlAs $ HEMTs," IEEE Trans. on Electron Dev., vol.42, No.6, pp.1017-1025, Jun., 1995. https://doi.org/10.1109/16.387231 -
Y. Kwon, D. Pavlidis, T. L. Brock, G. I. Ng, K. L. Tan and J. R. Velebir, "Submicron pseudomorphic double heterojunction
$InAlAs/In_{0.7}Ga_{0.3}As/InAlAs $ HEMTs with high cut-off and current-drive capability," IPRM 1993, 5th IEEE International Conference on Indium Phosphide and Related Materials, 1993, 19-22, pp.465-468, Apr., 1993. - N. Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart and A. Cappy, "100nm InAlAs/InGaAs Double-Gate HEMT using transferred substrate," IEDM 2004, Technical Digest, 13-15, pp. 1023- 1026, Dec., 2004.
- B. G. Vasallo, N. Wichmann, S. Bollaert , A. Cappy, T. Gonzalez , D. Pardo and J. Mateos, "Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs," EuMIC 2006, 1st European Microwave Integrated Circuits Conference, 2006, 10-13, pp.304-307, Sep., 2006.
- A-J Shey and W.H. Ku, "An analytical current- voltage characteristics model for high electron mobility transistors based on nonlinear chargecontrol formulation," IEEE Trans. on Electron Dev., Vol.36, No.10, pp.2299-2306, Oct., 1989. https://doi.org/10.1109/16.40914
- H. Brech, T. Grave, T. Simlinger and S. Selberherr, "Optimization of pseudomorphic HEMTs supported by numerical simulation," IEEE Trans. on Electron Dev., Vol.44, No.11, pp.1822-1828, Nov., 1997. https://doi.org/10.1109/16.641348
- H. Luth, "Nanostructures and Semiconductor Electronics," phys. stat. sol., Vol.192, No.2, pp.287-299, Dec., 1995. https://doi.org/10.1002/pssb.2221920206
- E. Sano, "Simulation of Nanometer-scale Semiconductor Devices Considering Quantum Effects," Int. J. RF. Microw CE.,Vol.14, pp.283-289, Oct., 2004. https://doi.org/10.1002/mmce.20011
- G. Krokidis, J.P. Xanthakis, N.K. Uzunoglu, "A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs," Solid-State Electron, Vol.52, No.5, pp.625-631, May, 2008. https://doi.org/10.1016/j.sse.2007.10.021
- ATLAS User's Manual, Silvaco International, 2010.
- C. L. Gardner and C. A. Ringhofer, "Smooth Quantum potential for the Hydrodynamic Model," Phys. Rev. E., Vol.53, No.1, pp.157-167, Jan., 1996. https://doi.org/10.1103/PhysRevE.53.157
- A.Wettstein, Quantum Effects in MOS Devices (Hartung-Gorre Verlag Konstanz, 2000).
- A. Wettstein, A. Schenk, and W. Fichtner, "Quantum Device-Simulation with the Density Gradient Model on Unstructured Grids," IEEE Trans. Electron Dev., Vol.42, No.2, pp.279-283, Feb., 2001.
- A. Wettstein, O. Penzin and E. Lyumkis, "Integration of Density Gradient Model into a General Purpose Device Simulator," VLSI Des., Vol.15, No.4, pp.751-759, 2002. https://doi.org/10.1080/1065514021000012363
- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. Gonzalez, D. Pardo, and J. Mateos, "Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/ InGaAs HEMTs," IEEE Trans. on Electron Dev., Vol.54, No.11, pp.2815-2822, Nov., 2007. https://doi.org/10.1109/TED.2007.907801
- J. R. Zhou and D. K. Ferry, "Simulation of ultrasmall GaAs MESFET using quantum moment equations," IEEE Trans. on Electron Dev., Vol.39, No.3, pp.473-478, Mar., 1992. https://doi.org/10.1109/16.123465
- V. Mitin, V.A. Kochelap and M.A. Stroscio, "Quantum Heterostructures: Microelectronics and Optoelectronics," Cambridge University Press, U.S.A, 1999.
- N. Wichman, I. Duszynski, X. Wallart, S. Bollaert and A. Cappy, "InAlAs-InGaAs Double-Gate HEMTs on Transferred Substrate," IEEE Electron Dev Lett., Vol.25, No.6, pp.354-356, Jun., 2004. https://doi.org/10.1109/LED.2004.829029
- D. Guerra, R. Akis, F. A. Marino, D. K. Ferry, S. M. Goodnick, M. Saraniti, "Aspect Ratio Impact on RF and DC Performance of State-of-the-Art Short- Channel GaN and InGaAs HEMTs," IEEE Electron Dev Lett., Vol.31, No.11, pp.1217-1219, Nov., 2010.