Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Short Channel Effect Immunity of Silicon Nanowire SONOS Flash Memory Using TCAD Simulation

  • Yang, Seung-Dong (Department of Electronics Engineering, Chungnam National University) ;
  • Oh, Jae-Sub (Department of Electronics Engineering, Chungnam National University) ;
  • Yun, Ho-Jin (Department of Electronics Engineering, Chungnam National University) ;
  • Jeong, Kwang-Seok (Department of Electronics Engineering, Chungnam National University) ;
  • Kim, Yu-Mi (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Sang Youl (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
  • Received : 2013.01.22
  • Accepted : 2013.03.21
  • Published : 2013.06.25
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Abstract

Silicon nanowire (SiNW) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices were fabricated and their electrical characteristics were analyzed. Compared to planar SONOS devices, these SiNW SONOS devices have good program/erase (P/E) characteristics and a large threshold voltage ($V_T$) shift of 2.5 V in 1ms using a gate pulse of +14 V. The devices also show excellent immunity to short channel effects (SCEs) due to enhanced gate controllability, which becomes more apparent as the nanowire width decreases. This is attributed to the fully depleted mode operation as the nanowire becomes narrower. 3D TCAD simulations of both devices show that the electric field of the junction area is significantly reduced in the SiNW structure.

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