Current Photovoltaic Research
- Volume 1 Issue 2
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- Pages.103-108
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- 2013
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- 2288-3274(pISSN)
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- 2508-125X(eISSN)
DOI QR Code
Low-temperature Epitaxial Growth of a Uniform Polycrystalline Si Film with Large Grains on SiO2 Substrate by Al-assisted Crystal Growth
- Ahn, Kyung Min (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Kang, Seung Mo (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Moon, Seon Hong (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Kwon, HyukSang (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Ahn, Byung Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
- Received : 2013.11.25
- Accepted : 2013.12.04
- Published : 2013.12.31
Abstract
Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a