Current Photovoltaic Research

  • 제1권2호
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  • Pages.73-81
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  • 2013
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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High-Efficiency Heterojunction with Intrinsic Thin-Layer Solar Cells: A Review

  • Dao, Vinh Ai (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Sangho (Department of Energy Science, Sungkyunkwan University) ;
  • Lee, Youngseok (Department of Energy Science, Sungkyunkwan University) ;
  • Kim, Sunbo (Department of Energy Science, Sungkyunkwan University) ;
  • Park, Jinjoo (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Ahn, Shihyun (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Junsin (School of Information and Communication Engineering, Sungkyunkwan University)
  • 투고 : 2013.11.20
  • 심사 : 2013.12.02
  • 발행 : 2013.12.31
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초록

Heterojunction with Intrinsic Thin-layer (HIT) solar cells are currently an important subject in industrial trends for thinner solar cell wafers due to the low-temperature of production processes, which is around $200^{\circ}C$, and due to their high-efficiency of 24.7%, as reported by the Panasonic (Sanyo) group. The use of thinner wafers and the enhancement of cell performance with fabrication at low temperature have been special interests of the researchers. The fundamental understanding of the band bending structures, choice of materials, fabrication process, and nano-scale characterization methods to provide necessary understanding of the interface passivation mechanisms, emitter properties, and requirements for transparent oxide conductive layers is presented in this review. This information should be used for the performance characterization of the developing technologies for HIT solar cells.

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