Journal of the Korean Institute of Illuminating and Electrical Installation Engineers (조명전기설비학회논문지)

The Korean Institute of IIIuminating and Electrical Installation Engineers (한국조명전기설비학회)
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Characteristics of CIGS Thin Film Photovoltaic Cells with a Change of Rising-Temperature Time in Rapid Thermal Processing

급속열처리장치 승온 조건에 따른 CIGS 박막 태양전지 특성 연구

  • 정용민 (금호전기 종합기술원) ;
  • 박찬일 (조선대학교 대학원 전기공학과) ;
  • 조금배 (조선대학교 전기공학과)
  • Received : 2013.02.01
  • Accepted : 2013.03.04
  • Published : 2013.03.31
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Abstract

Cu(In,Ga)$Se_2$ (CIGS) thin films were annealed on molybdenium/sodalime glass substrates of $300{\times}300mm^2$ by rapid thermal processing (RTP) with 2-step rising-temperature times in $N_2$ ambient. Morphological property, structural characteristics and chemical composition of the precursor of CIGS thin films were influenced directly with a change of $1^{st}$-step rising-temperature time in RTP whereas there is no significant difference with the different $2^{nd}$-step rising-temperature time (final crystallization temperature). The shorter $1^{st}$-step rising-temperature time in RTP obtained the higher photovoltaic cell efficiency from 7.469% to 8.479% even though the ideal composition in CIGS thin films could not be accoplished in this study.

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References

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