Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Design of 80 V Grade Low-power Semiconductor Device

80 V급 저전력 반도체 소자의 관한 연구

  • Sim, Gwan Pil (Department of Materials Engineering, Far East University) ;
  • Ann, Byoung Sup (Department of Materials Engineering, Far East University) ;
  • Kang, Ye Hwan (Department of Materials Engineering, Far East University) ;
  • Hong, Young Sung (Department of Materials Engineering, Far East University) ;
  • Kang, Ey Goo (Department of Materials Engineering, Far East University)
  • 심관필 (극동대학교 에너지반도체학과) ;
  • 안병섭 (극동대학교 에너지반도체학과) ;
  • 강예환 (극동대학교 에너지반도체학과) ;
  • 홍영성 (극동대학교 에너지반도체학과) ;
  • 강이구 (극동대학교 에너지반도체학과)
  • Received : 2013.01.22
  • Accepted : 2013.02.24
  • Published : 2013.03.01
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Abstract

Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

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References

  1. B. J. Baliga, Fundamentals of Power Semiconductor Devices, 279
  2. B. J. Baliga, Fundamentals of Power Semiconductor Devices, 737
  3. E. G. Kang, B. S. Ann, and T. J. Nam, J. KIEEME, 23, 273 (2010).