Journal of the Optical Society of Korea

  • 제17권1호
  • /
  • Pages.38-43
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  • 2013
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  • 1226-4776(pISSN)
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  • 2093-6885(eISSN)
한국광학회 (Optical Society of Korea)
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Determination of Optical Constants of Thin Films in Extreme Ultraviolet Wavelength Region by an Indirect Optical Method

  • 투고 : 2012.10.30
  • 심사 : 2013.01.22
  • 발행 : 2013.02.25
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초록

In this study, we propose a simple and indirect method to determine the optical constants of Mo and ITO thin films in the extreme ultraviolet (EUV) wavelength region by using X-ray reflectometry (XRR) and Rutherford backscattering spectrometry (RBS). Mo and ITO films were deposited on silicon substrates by using an RF magnetron sputtering method. The density and the composition of the deposited films were evaluated from the XRR and RBS analysis, respectively and then the optical constants of the Mo and ITO films were determined by an indirect optical method. The results suggest that the indirect method by using the XRR and RBS analysis will be useful to search for suitable high absorbing EUVL mask material quickly.

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참고문헌

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피인용 문헌

  1. Measuring the Thickness of Flakes of Hexagonal Boron Nitride Using the Change in Zero-Contrast Wavelength of Optical Contrast vol.19, pp.5, 2015, https://doi.org/10.3807/JOSK.2015.19.5.503
  2. Binary mask designs with single- and double-layer absorber stacks for extreme ultraviolet lithography and actinic inspection vol.53, pp.4, 2014, https://doi.org/10.1364/AO.53.000A42
  3. Thickness and Surface Measurement of Transparent Thin-Film Layers using White Light Scanning Interferometry Combined with Reflectometry vol.18, pp.3, 2014, https://doi.org/10.3807/JOSK.2014.18.3.236