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열처리에 의한 Cu(In,Ga)Se2 태양전지 특성에 관한 연구

A study on Cu(In,Ga)Se2 solar cell characteristic by sintering

  • 투고 : 2013.07.29
  • 심사 : 2013.09.23
  • 발행 : 2013.12.31

초록

본 논문은 동시진공증발법으로 제작된 시편을 $500^{\circ}C$에서 열처리한 시편은 기공이 많이 발생되어 결정결함이 발생 되었어 열처리 시 Se분위기하에서 실행을 해야 된다는 것을 알 수가 있었다. 기판온도를 $430^{\circ}C$, $460^{\circ}C$, $480^{\circ}C$, $500^{\circ}C$로 변화주어 제작된 시편을 열처리 한 결과 결정입자 크기가 증가되어 밀도가 향상되었다. 그리고 XRD 분석결과, 열처리 후에 Cu2Se상이 제거되었으며 열처리 전 후의 흡수지수는 큰 변화가 없었다. 이것은 흡수지수는 열처리보다 시편 두께에 의해 결정된다는 것을 알 수가 있었다.

In this paper, we prepared the samples with the heat-treated substrate by means of co-evaporation method. The samples prepared with heat-treated substrate of $500^{\circ}C$showed the vacancy on the surface, and it could be prevented by Se ambient condition. The samples prepared with variable heat-treated substrates such as $430^{\circ}C$, $460^{\circ}C$, $480^{\circ}C$ and $500^{\circ}C$ showed the increase of grain resulted to the increase of the density. Based on the XRD analysis, the heat treatment could remove the Cu2Se phase of the samples, but it didn't affect the absorption index of the samples. We, therefore, conclude the absorption index is not affected by heat treatment and is controlled by the thickness of the sample.

키워드

참고문헌

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