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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Deformation of the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor characteristics by UV irradiation

  • Lim, Jin Hong (Dept. of Semiconductor Science and Technology /SPRC, Chonbuk National University) ;
  • Kim, Jeong Jin (Dept. of Semiconductor Science and Technology /SPRC, Chonbuk National University) ;
  • Yang, Jeon Wook (Dept. of Semiconductor Science and Technology /SPRC, Chonbuk National University)
  • Received : 2013.11.28
  • Accepted : 2013.12.09
  • Published : 2013.12.30
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Abstract

The impact of UV irradiation process on the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor was investigated. Due to the high intensity UV irradiation before the gate dielectric deposition, the conductivity of AlGaN/GaN structure and the drain saturation current of the transistor increased by about 10 %. However, the pinch off characteristics of transistor was severely deformed by the process. By comparing the electrical characteristics of the transistors, it was proposed that the high intensity UV irradiation formed a sub-channel under the two dimensional electron gas of AlGaN/GaN structure even without additional impurity injection.

Keywords

References

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