JSTS:Journal of Semiconductor Technology and Science

  • 제13권6호
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  • Pages.546-550
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  • 2013
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

  • Shin, Sunhae (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology) ;
  • Kang, In Man (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology) ;
  • Kim, Kyung Rok (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology)
  • 투고 : 2013.05.02
  • 심사 : 2013.07.19
  • 발행 : 2013.12.31
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초록

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

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참고문헌

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피인용 문헌

  1. Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications vol.54, pp.6S1, 2015, https://doi.org/10.7567/JJAP.54.06FG07
  2. Novel five-state latch using double-peak negative differential resistance and standard ternary inverter vol.55, pp.4S, 2016, https://doi.org/10.7567/JJAP.55.04ED10