Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of Annealing Temperature on Properties of Al-Doped ZnO Thin Films prepared by Sol-Gel Dip-Coating

  • Jun, Min-Chul (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Koh, Jung-Hyuk (Dept. of Electronic materials Engineering, Kwangwoon University)
  • Received : 2012.04.23
  • Accepted : 2012.06.29
  • Published : 2013.01.02
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Abstract

Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{\times}10^{-3}{\Omega}cm$ was observed at $650^{\circ}C$.

Keywords

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