ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Dynamic Pixel Models for a-Si TFT-LCD and Their Implementation in SPICE

  • Received : 2011.10.25
  • Accepted : 2012.01.16
  • Published : 2012.08.30
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Abstract

A dynamic analysis of an amorphous silicon (a-Si) thin film transistor liquid crystal display (TFT-LCD) pixel is presented using new a-Si TFT and liquid crystal (LC) capacitance models for a Simulation Program with Integrated Circuit Emphasis (SPICE) simulator. This dynamic analysis will be useful when predicting the performance of LCDs. The a-Si TFT model is developed to accurately estimate a-Si TFT characteristics of a bias-dependent gate to source and gate to drain capacitance. Moreover, the LC capacitance model is developed using a simplified diode circuit model. It is possible to accurately predict TFT-LCD characteristics such as flicker phenomena when implementing the proposed simulation model.

Keywords

References

  1. M. Shur and M. Hack, "Physics of Amorphous Silicon Based Alloy Field-Effect Transistors," J. Appl. Phys., vol. 55, no. 10, May 1984, pp. 3831-3842. https://doi.org/10.1063/1.332893
  2. H. Aoki and E. Khalily, "A New Semi-Empirical Model for Amorphous Silicon Thin-Film-Transistors," Proc. Int. VPAD, 1993, pp. 138-139.
  3. H. Aoki, "Dynamic Characterization of a-Si TFT-LCD Pixels," IEEE Trans. Electron. Devices, vol. 43, no. 1, Jan. 1996.
  4. H. Aoki, "Timing Measurement and Simulation of a TFT-LCD Panel Using Pixel Macro Models," Proc. SID, May 1999.

Cited by

  1. The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT vol.32, pp.8, 2012, https://doi.org/10.1088/1361-6641/aa7477