대한금속재료학회지 (Korean Journal of Metals and Materials)

  • 제50권8호
  • /
  • Pages.613-618
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  • 2012
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  • 1738-8228(pISSN)
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  • 2288-8241(eISSN)
대한금속재료학회 (The Korean Institute of Metals and Materials)
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고희석 SiH4 가스를 이용하여 증착한 저온 PECVD 실리콘 질화물 박막의 기계적, 전기적 특성연구

Characteristics of Low Temperature SiNx Films Deposited by Using Highly Diluted Silane in Nitrogen

  • 노길선 (서울시립대학교 나노과학기술학과) ;
  • 금기수 (서울시립대학교 나노과학기술학과) ;
  • 홍완식 (서울시립대학교 나노과학기술학과)
  • No, Kil-Sun (Department of Nano Science and Technology, University of Seoul) ;
  • Keum, Ki-Su (Department of Nano Science and Technology, University of Seoul) ;
  • Hong, Wan-Shick (Department of Nano Science and Technology, University of Seoul)
  • 투고 : 2011.12.16
  • 발행 : 2012.08.25
⟨ 이전 논문 다음 논문 ⟩

초록

We report on electrical and mechanical properties of silicon nitride ($SiN_x$) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at $200^{\circ}C$ from $SiH_4$ highly diluted in $N_2$. The films were also prepared from $SiH_4$ diluted in He for comparison. The $N_2$ dilution was also effective in improving adhesion of the $SiN_x$ films, fascilitating construction of thin film transistors (TFTs). Metal-insulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the $SiN_x$ films from $N_2$-diluted $SiH_4$ were estimated to be $1{\times}10^{13}{\Omega}{\cdot}cm$, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of $0.16cm^2/Vs$, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of > $10^6$.

키워드

과제정보

연구 과제 주관 기관 : 지식경제부, 교육과학기술부

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