References
- K. Yoon, Y. Kim, J. Park, C. H. Shin, S. Baek, J. Jang, S. M. Iftiquar, J. Yi, Preparation and characterization of p-type hydrogenated amorphous silicon oxide film and its application to solar cell, J. of Non-Cryst. Solids 357 (2011) 2826-2832. https://doi.org/10.1016/j.jnoncrysol.2011.03.009
- A. Sarker, A. K. Barua, Development of high quilty p-type hydrogenated amorphous silicon oxide film and its use in improving the performance of single junction amorphous silicon solar cells, Jpn. J. Appl. Phys. 41 (2002) 765-769. https://doi.org/10.1143/JJAP.41.765
- J. Sritharathikhun, F. Jiang, S. Miyajima, A. Yamada, and M. Konagai, Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells, Jap. J. of Appl. Phys. 48 (2009) 101603 - 101603(5). https://doi.org/10.1143/JJAP.48.101603
- A. Sarker and A. K. Barua, Development of High Quality P-Type Hydrogenated Amorphous Silicon Oxide Film and Its Use in Improving the Performance of Single Junction Amorphous Silicon Solar Cells, Jpn. J. Appl. Phys. 41 (2002) 765-769. https://doi.org/10.1143/JJAP.41.765
- M. R. Yang, K. S. Chen, S. T. Hsu, T. A. Wu, Fabrication and characteristics of SiOx films by plasma chemical vapor deposition of tetramethylorthosilicate, Surf. Coat. Technol. 123 (2000) 204-209. https://doi.org/10.1016/S0257-8972(99)00521-6
- G. Lucovsky, J. Yang, S.S. Chao, J.E. Tyler, W. Czubatyj, Oxygenbonding environments in glow-deposited amorphous siliconhydrogen alloy films, Phys. Rev. B 28 (1983) 3225-3233. https://doi.org/10.1103/PhysRevB.28.3225
-
A. Janotta, R. Janssen, M. Schmidt, T. Graf, M. Stutzmann, L. Gorgens, A. Bergmaier, G. Dollinger, C. Hammerl, S. Schreiber, B. Stritzker, Doping and its efficiency in
$\alpha$ -$SiO_{x}$ :H, Phys. Rev. B 69 (2004) 115206-1-16. https://doi.org/10.1103/PhysRevB.69.115206 - M. Isomura, T. Kinoshita, S. Tsuda, Boron-compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities, Appl. Phys. Lett. 68 (1996) 1201-1203. https://doi.org/10.1063/1.115968
- I. Wagner, H. Stasiewski, B. Abeles, W.A. Landford, Surface states in P- and B-doped amorphous hydrogenated silicon, Phys. Rev. B 28 (1983) 7080-7086. https://doi.org/10.1103/PhysRevB.28.7080
- D. Das, S. M. Iftiquar, A.K. Barua, Wide optical-gap a-SiO:H films prepared by rf glow discharge, J. Non-Cryst. Solids 210 (1997) 148-154. https://doi.org/10.1016/S0022-3093(96)00597-2
-
R. Carius, R. Fischer, E. Holzenkampfer, J. Stuke, Photoluminescence in the amorphous system
$SiO_{x}$ , J. Appl. Phys. 52 (1981), 4241-4243. https://doi.org/10.1063/1.329274 -
I. Umezu. K. Miyamoto, N. Sakamoto, K. Maeda, Optical bond gap and Tauc gap in a-
$SiO_{x}$ :H and a-SiNx:H films, Jpn. J. Appl. Phys. 34 (1995) 1753-1758. https://doi.org/10.1143/JJAP.34.1753 - A. Hadjadj, P. St'ahel, P. R. i Cabarrocas, V. Paret, Y. Bounouh, J. C. Martin, Optimum doping level in a-Si:H and a-SiC:H materials, J. Appl. Phys. 83 (1998) 830- 836. https://doi.org/10.1063/1.366764
- T. Jana, S. Ghosh, S. Ray, Silicon oxide thin films prepared by a photo-chemical vapor deposition technique, J. Mater. Sci. 32 (1997) 4895-4900. https://doi.org/10.1023/A:1018616022092
-
A.V. Shah, M. Vanecek, J. Meier, F. Meillaud, J. Guillet, D. Fischer, C. Droz, X. Niquille, S. Fay, E. Vallat-Sauvain, V. Terrazzoni- Daudrix, J. Bailat, Basic efficiency limits, recent experimental results and novel light-trapping schemes in a-Si:H,
$\mu c$ -Si:H and 'micromorph tandem' solar cells, J. Non-Cryst. Solids 338-340 (2004) 639-645. https://doi.org/10.1016/j.jnoncrysol.2004.03.074
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