Transactions on Electrical and Electronic Materials

  • 제13권3호
  • /
  • Pages.144-148
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  • 2012
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Dry Etching Properties of TiO2 Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

  • Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 투고 : 2012.01.03
  • 심사 : 2012.03.28
  • 발행 : 2012.06.25
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초록

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

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피인용 문헌

  1. Surface Etching of TiO2Thin Films Using High Density Cl2/Ar Plasma vol.16, pp.6, 2015, https://doi.org/10.4313/TEEM.2015.16.6.346
  2. Inductive couple plasma reactive ion etching characteristics of TiO2 thin films vol.587, 2015, https://doi.org/10.1016/j.tsf.2014.11.055
  3. Etching Characteristics and Mechanisms of TiO2 Thin Films in CF4 + Ar, Cl2 + Ar and HBr + Ar Inductively Coupled Plasmas vol.36, pp.6, 2016, https://doi.org/10.1007/s11090-016-9737-y
  4. Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing vol.107, 2014, https://doi.org/10.1016/j.vacuum.2014.03.025
  5. Effect of Dry Etching of TiO2Thin Films Using Inductively Coupled Plasma vol.456, pp.1, 2013, https://doi.org/10.1080/00150193.2013.846201