전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제61권6호
  • /
  • Pages.817-820
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  • 2012
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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ZnO에서 질소 불순물에 의한 p-type Capacitance

P-type Capacitance Observed in Nitrogen-doped ZnO

  • 유현근 (아주대 정보통신대 전자공학과) ;
  • 김세동 (아주대 정보통신대 전자공학과) ;
  • 이동훈 (아주대 정보통신대 전자공학과) ;
  • 김정환 (아주대 정보통신대 전자공학과) ;
  • 조중열 (아주대 정보통신대 전자공학과)
  • 투고 : 2011.11.14
  • 심사 : 2012.05.16
  • 발행 : 2012.06.01
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초록

We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT's), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at $450^{\circ}C$ and the other grown at $350^{\circ}C$. ZnO grown at $450^{\circ}C$ showed smooth capacitance profile with electron density of $1.5{\times}10^{20}cm^{-3}$. In contrast, ZnO grown at $350^{\circ}C$ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the $SiO_2$ interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.

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참고문헌

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