전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제61권5호
  • /
  • Pages.753-756
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  • 2012
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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개선된 CTAT 보상을 가지는 저전압 CMOS Bandgap Voltage Reference

Modified Low-Votlage CMOS Bandgap Voltage Reference with CTAT Compensation

  • 투고 : 2012.01.16
  • 심사 : 2012.04.26
  • 발행 : 2012.05.01
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초록

In this paper, a modified low-votlage CMOS bandgap voltage reference with CTAT compensation is presented. The proposed structure doesn't use PTAT current. The proposed structure is more simple than the existing structure and doesn't use the eighteen BJT. The modified low-votlage CMOS bandgap voltage reference with CTAT compensation has been successfully verified in a standard 0.18um CMOS process. The simulation results have confirmed that, with the minimum supply voltage of 1.25V, the output reference voltage at 549mV has a temperature coefficient of 12$ppm/^{\circ}C$ from $0^{\circ}C$ to $100^{\circ}C$.

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참고문헌

  1. K. N. Leung and K. T. Mok, "A sub-1-V 15-ppm/$^{\circ}C$ CMOS bandgap voltage reference without requiring low threshold voltage device," IEEE J. Solid-State Circuits, vol. 37, no. 4, pp. 526-529, Apr. 2002. https://doi.org/10.1109/4.991391
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  6. Ming-Dou Ker, Jung-Sheng Chen, "New Curvature-Compensation Technique for CMOS Bandgap Reference With Sub-1-V Operation," IEEE Transactions on Circuits and Systems, vol. 53, no. 8, pp. 667-671, Aug. 2006. https://doi.org/10.1109/TCSII.2006.876377