Journal of Ceramic Processing Research

Ceramic Processing Research Center (한양대학교 세라믹연구소)
권호 표지

Characterization of GaN on GaN LED by HVPE method

  • Jung, Se-Gyo (Department of Applied Sciences, Korea Maritime University) ;
  • Jeon, Hunsoo (Department of Applied Sciences, Korea Maritime University) ;
  • Lee, Gang Seok (Department of Applied Sciences, Korea Maritime University) ;
  • Bae, Seon Min (Department of Applied Sciences, Korea Maritime University) ;
  • Kim, Kyoung Hwa (Department of Applied Sciences, Korea Maritime University) ;
  • Yi, Sam Nyung (Department of Applied Sciences, Korea Maritime University) ;
  • Yang, Min (Department of Applied Sciences, Korea Maritime University) ;
  • Ahn, Hyung Soo (Department of Applied Sciences, Korea Maritime University) ;
  • Yu, Young Moon (LED Marine Convergence Technology R&BD Center et Pukyung National University) ;
  • Kim, Suck-Whan (Department of Physics, Andong National University) ;
  • Cheon, Seong Hak (CSsol.Co., Ltd) ;
  • Ha, Hong Ju (CSsol.Co., Ltd) ;
  • Sawaki, Nobuhiko (Department of Electrical and Electronics Engineering, Aichi Institute of Technology)
  • Published : 2012.07.01
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Abstract

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

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