Transactions on Electrical and Electronic Materials

  • 제13권2호
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  • Pages.69-72
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  • 2012
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Characterization of Ultra Low-k SiOC(H) Film Deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD)

  • Kim, Sang-Yong (Department of Semiconductor System, Korea Polytechnic College IV)
  • 투고 : 2011.08.03
  • 심사 : 2012.01.05
  • 발행 : 2012.04.25
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초록

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

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  4. Characteristics of low- κ SiOC films deposited via atomic layer deposition vol.645, 2018, https://doi.org/10.1016/j.tsf.2017.10.045
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