한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권4호
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  • Pages.282-285
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  • 2012
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Li Dopant가 ZnO 세라믹스의 전기적 특성과 미세 구조에 미치는 영향

Effects of Li Dopant on Electrical Properties and Microstructure of ZnO Ceramics

  • 전민철 (광운대학교 전자재료공학과) ;
  • 고중혁 (광운대학교 전자재료공학과)
  • Jun, Min-Chul (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koh, Jung-Hyuk (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2012.03.20
  • 심사 : 2012.03.24
  • 발행 : 2012.04.01
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초록

It is well known that Zinc Oxide (ZnO) is an attractive material for its various applications. ZnO has been mostly used as a transparent conducting oxide in liquid crystal displays, solar cells due to its advantages of low cost, high productivity, and excellent electrical conductivity. Notably, flexible-dye-sensitized solar cells (DSSCs) based on polyethylene terephthalate (PET) substrates require low temperature sintering processing conditions. Therefore, low temperature processing conditions have been strongly required for transparent conducting film applications. In this paper, we prepared low temperature-sintered ZnO ceramics employing Li as a sintering aid.

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참고문헌

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