한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권3호
  • /
  • Pages.187-192
  • /
  • 2012
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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고내압 IGBT의 전기적 특성 향상에 관한 연구

High Voltage IGBT Improvement of Electrical Characteristics

  • 안병섭 (극동대학교 에너지반도체학과) ;
  • 정헌석 (극동대학교 에너지반도체학과) ;
  • 정은식 (고려대학교 전기공학과) ;
  • 김성종 (극동대학교 에너지반도체학과) ;
  • 강이구 (극동대학교 에너지반도체학과)
  • Ahn, Byoung-Sup (Department of Energy Semiconductor Engineering, Far East University) ;
  • Chung, Hun-Suk (Department of Energy Semiconductor Engineering, Far East University) ;
  • Jung, Eun-Sik (Department of Electrical Engineering, Korea University) ;
  • Kim, Seong-Jong (Department of Energy Semiconductor Engineering, Far East University) ;
  • Kang, Ey-Goo (Department of Energy Semiconductor Engineering, Far East University)
  • 투고 : 2012.02.20
  • 심사 : 2012.02.24
  • 발행 : 2012.03.01
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초록

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

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참고문헌

  1. B. J. Baliga (PWS Publishers, Boston, 1996)
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