References
- M. T. Kostyshin, E. V. mikhailovskaya, and P. F. Romanenko, Sov. Phys. Solid State, 8, 451 (1966).
- J. Hajto, P. J. S. Ewen, R. E. Belford, and A. E. Owen, Thin Solid Films, 200, 229 (1991). https://doi.org/10.1016/0040-6090(91)90195-4
- M. N. Lozicki, S. W. Hsia, A. E. Owen, and P. J. S. Ewen, J. Noncryst. Solids, 137, 1341 (1991). https://doi.org/10.1016/S0022-3093(05)80372-2
- C. H. Yeo, K. N. Lee, K. Shin, J. B. Kim, and H. B. Chung, Jpn. J. Appl. Phys., 44, 5769 (2005). https://doi.org/10.1143/JJAP.44.5769
- N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, J. Appl. Phys., 69, 2849 (1991). https://doi.org/10.1063/1.348620
- R. Symanczyk, M. Balakrishnan, C. Gopalan, T. Happ, M. Kozicki, M. Kund, T. Mikolajick, M. Mitkova, M. Park, C. Pinnow, J. Robertson, and K. Ufert, Proceedings of the 2003 Non-Volatile Memory Technology Symposium, 17 (2003).
- M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, Proceedings of the 2004 Non-Volatile Memory Technology Symposium, 10 (2004).
- M. N. Kozicki, M. Park, and M. Mitkova, IEEE T. Nanotechnol., 4, 331 (2005). https://doi.org/10.1109/TNANO.2005.846936
- G. Muller, T. Happ, M. Kund, G. Y. Lee, N. Nagel, and R. Sezi, IEDM Tech. Dig., 567 (2004).
- J. C. Bruyere and B. K. Chakraverty, Appl. Phys. Lett., 16, 40 (1970). https://doi.org/10.1063/1.1653024
- A. Hiroyuki and S. Hisashi, Proceeding of the IEEE, 98 (2010).