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Synthesis and Characterization of SiO2-Sheathed ZnSe Nanowires

  • Kim, Hyun-Su (Department of Materials science and Engineering, Inha University) ;
  • Jin, Chang-Hyun (Department of Materials science and Engineering, Inha University) ;
  • A,, So-Yeon (Department of Materials science and Engineering, Inha University) ;
  • Lee, Chong-Mu (Department of Materials science and Engineering, Inha University)
  • Received : 2011.10.20
  • Accepted : 2011.11.23
  • Published : 2012.02.20

Abstract

ZnSe/$SiO_2$ coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of $SiO_2$. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/$SiO_2$ coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the $SiO_2$-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.

Keywords

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