Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Annealing in a Nitrogen Atmosphere on the Properties of In2O3 Films Deposited with RF Magnetron Sputtering

RF 마그네트론 스퍼터로 증착된 In2O3 박막의 질소분위기 열처리에 따른 특성변화

  • Kong, Young-Min (School of Materials Science and Engineering, University of Ulsan) ;
  • Lee, Young-Jin (School of Materials Science and Engineering, University of Ulsan) ;
  • Heo, Sung-Bo (School of Materials Science and Engineering, University of Ulsan) ;
  • Lee, Hak-Min (School of Materials Science and Engineering, University of Ulsan) ;
  • Seo, Min-Su (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Yu-Sung (R&D Division, New Optics LTD.) ;
  • Kim, Dae-Il (School of Materials Science and Engineering, University of Ulsan)
  • 공영민 (울산대학교 첨단소재공학부) ;
  • 이영진 (울산대학교 첨단소재공학부) ;
  • 허성보 (울산대학교 첨단소재공학부) ;
  • 이학민 (울산대학교 첨단소재공학부) ;
  • 서민수 (울산대학교 첨단소재공학부) ;
  • 김유성 (뉴옵틱스 기술연구소) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2011.10.07
  • Accepted : 2011.11.16
  • Published : 2012.01.27
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Abstract

$In_2O_3$ films were deposited by RF magnetron sputtering on a glass substrate and then the effect of post deposition annealing in nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. After deposition, the annealing process was conducted for 30 minutes at 200 and $400^{\circ}C$. XRD pattern analysis showed that the as deposited films were amorphous. When the annealing temperature reached 200-$400^{\circ}C$, the intensities of the $In_2O_3$ (222) major peak increased and the full width at half maximum (FWHM) of the $In_2O_3$ (222) peak decreased due to the crystallization. The films annealed at $400^{\circ}C$ showed a grain size of 28 nm, which was larger than that of the as deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical sheet resistance decreased. In this study, the films annealed at $400^{\circ}C$ showed the highest optical transmittance of 76% and also showed the lowest sheet resistance of $89{\Omega}/\Box$. The figure of merit reached a maximum of $7.2{\times}10^{-4}{\Omega}^{-1}$ for the films annealed at $400^{\circ}C$. The effect of the annealing on the work-function of $In_2O_3$ films was considered. The work-function obtained from annealed films at $400^{\circ}C$ was 7.0eV. Thus, the annealed $In_2O_3$ films are an alternative to ITO films for use as transparent anodes in OLEDs.

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References

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