전자공학회논문지 (Journal of the Institute of Electronics and Information Engineers)

  • 제49권12호
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  • Pages.179-183
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  • 2012
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  • 2287-5026(pISSN)
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  • 2288-159X(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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터널링 전계효과 트랜지스터의 불순물 분포 변동 효과

Random Dopant Fluctuation Effects of Tunneling Field-Effect Transistors (TFETs)

  • 투고 : 2012.07.23
  • 발행 : 2012.12.25
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초록

3차원 시뮬레이션을 이용하여 터널링 전계효과 트랜지스터(TFET)의 불순물 분포 변동(RDF) 효과에 대해 살펴보았다. TFET의 RDF 효과는 매우 낮은 바디 도핑 농도 때문에 많이 논의되지 않았다. 하지만 본 논문에서는 임의로 생성되고 분포되는 소스 불순물이 TFET의 문턱전압 ($V_{th}$)과 드레인 유기 전류 증가 (DICE), 문턱전압이하 기울기 (SS)의 변화를 증가시킴을 발견하였다. 또한, TFET의 RDF 효과를 감소시킬 수 있는 몇 가지 방법을 제시하였다.

The random dopant fluctuation (RDF) effects of tunneling field-effect transistors (TFETs) have been observed by using atomistic 3-D device simulation. Due to extremely low body doping concentration, the RDF effects of TFETs have not been seriously investigated. However, in this paper, it has been found that the randomly generated and distributed source dopants increase the variation of threshold voltage ($V_{th}$), drain induced current enhancement (DICE) and subthreshold slope (SS) of TFETs. Also, some ways of relieving the RDF effects of TFETs have been presented.

키워드

참고문헌

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