InP 식각정지층을 갖는 InAlAs/InGaAs/GaAs MHEMT 소자의 항복 특성 시뮬레이션에 관한 연구

Study on the Breakdown Simulation for InAlAs/InGaAs/GaAs MHEMTs with an InP-etchstop Layer

  • Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
  • 투고 : 2012.05.23
  • 심사 : 2012.06.15
  • 발행 : 2012.06.30

초록

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

키워드

참고문헌

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