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Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

  • Seo, Jung-Hun (Department of Electrical and Computer Engineering, University of Wisconsin-Madison) ;
  • Yuan, Hao-Chih (Department of Electrical and Computer Engineering, University of Wisconsin-Madison) ;
  • Sun, Lei (Department of Electrical and Computer Engineering, University of Wisconsin-Madison) ;
  • Zhou, Weidong (Department of Electrical Engineering, University of Texas) ;
  • Ma, Zhenqiang (Department of Electrical and Computer Engineering, University of Wisconsin-Madison)
  • 투고 : 2011.01.30
  • 심사 : 2011.02.25
  • 발행 : 2011.06.30

초록

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency ($f_T/f_{max}$) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies ($f_{res}$) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.

키워드

참고문헌

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피인용 문헌

  1. Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature vol.6, pp.4, 2011, https://doi.org/10.1002/aelm.201901023