Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films

가스 센서용 ZnO, SnO2 박막의 이방성 식각을 위한 mask 재료의 식각 선택도 조사

  • Park, Jong-Cheon (Department of Nano Fusion Technology, Pusan National University) ;
  • Cho, Hyun (Department of Nanomechatronics Engineering, Pusan National University)
  • 박종천 (부산대학교 나노융합기술학과) ;
  • 조현 (부산대학교 나노메카트로닉스공학과)
  • Received : 2011.07.15
  • Accepted : 2011.08.05
  • Published : 2011.08.31
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Abstract

Etch selectivities of mask materials to ZnO and $SnO_2$ films were studied in $BCl_3$/Ar and $CF_4$/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In $25BCl_3$/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7 ~ 17 for ZnO over Ni were produced in $25CF_4$/10Ar mixtures. $SnO_2$ showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for $SnO_2$ over Ni.

고이온밀도 플라즈마 식각에 의한 고종횡비, 고이방성을 갖는 ZnO, $SnO_2$ 나노 구조 가스 감응층 형성을 위하여 mask 재료들과의 식각 선택도를 조사하였다. $25BCl_3$/10Ar ICP 플라즈마에서는 ZnO와 Ni 간 5.1~6.1 범위의 식각 선택도가 확보된 반면에 Al의 경우 효율적인 식각 선택도를 확보할 수 없었다. $25CF_4$/10Ar ICP 플라즈마에서는 ZnO와 Ni 간에 7~17 범위의 높은 식각 선택도를 얻을 수 있었다. $SnO_2$는 $SnF_x$ 식각 생성물의 높은 휘발성에 기인하여 Ni에 비해 매우 높은 식각 속도를 나타내었고, 최고치 약 67의 매우 높은 식각 선택도를 확보하였다.

Keywords

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