참고문헌
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Myung-Sik Son, Bok-Hyung Lee, Mi-Ra Kim, Sam-Dong Kim, and Jin-Koo Rhee,"Simulation of the DC and Millimeter-wave Characteristics of 0.1-um Offset
$\Gamma$ -shaped Gate In_xGa_1-xAs/In_0.52Al_0.48As/GaAs MHEMTs with Various In_xGa_1-xAs Channels", Journal of the Korean Physical Society, Vol. 44, No.2, pp.408-417, Feb. 2004. -
한민, 김삼동, 이진구, "0.1
$\mu$ m 이하의 게이트 길이를 갖는 Metamorphic High Electron Mobility Transistor의 모델링 및 구조 최적화", 대한전자공학회, 전자공학회논문지-SD, 42권, 3호, pp. 1-8, 2005년 3월. - C.S. Whelan, P.F. Marsh, W.E. Hoke, R.A. McTaggart, C.P. McCarroll, TE. Kazior,"GaAs metamorphic HEMT (MHEMT): an attlClctive altemative to InP HEMTs for high performance low noise and power applications", Proceedings of 2000 International Conference on Indium Phosphide and Related Materials, pp.337-340, May 14-18, 2000.
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- Mark H. Somerville, Alexander Ernst, and Jesus A. del Alamo, "A Physical Model for the Kink Effect in InAlAs/InGaAs HEMT's", IEEE Tansactions on Electron Devices, vol. 47, no. 5, pp. 922-929, May 2000. https://doi.org/10.1109/16.841222
- Yong-Hyun Baek, Jung-Hun Oh, Seok-Gyu Choi, Woo-Suk SuI, and Jin-Koo Rhee,"Comparison of the Characteristic of Metamorphic HEMTs with Different Passivation Materials", Journal of the Korean Physical Society, Vol. 54, No.5, pp.1868-1872, May 2009. https://doi.org/10.3938/jkps.54.1868
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