Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Implementation of High Carrier Mobility in Al-N Codoped p-Type ZnO Thin Films Fabricated by Direct Current Magnetron Sputtering with ZnO:Al2O3 Ceramic Target

  • Jin, Hujie (Department of Physics, Yanbian University) ;
  • Xu, Bing (School of Electrical and Information Communication Engineering, Wonkwang University) ;
  • Park, Choon-Bae (School of Electrical and Information Communication Engineering, Wonkwang University)
  • Received : 2011.03.22
  • Accepted : 2011.06.02
  • Published : 2011.08.25
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Abstract

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

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