한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권9호
  • /
  • Pages.766-772
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  • 2011
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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DOI QR코드

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고상 결정화법을 위한 새로운 공정조건으로 제작된 다결정 Si 박막의 태양전지 특성 평가

Evaluation of Solar Cell Properties of Poly-Si Thin Film Fabricated with Novel Process Conditions for Solid Phase Crystallization

  • 권순용 (충주대학교 신소재공학과, 친환경에너지 부품소재센터) ;
  • 정지현 (충주대학교 신소재공학과, 친환경에너지 부품소재센터) ;
  • ;
  • Kweon, Soon-Yong (Department of Materials Engineering, ReSEM, Chungju National University) ;
  • Jeong, Ji-Hyun (Department of Materials Engineering, ReSEM, Chungju National University) ;
  • Tao, Yuguo (University of New South Wales, ARC Photovoltaics Center of Excellence) ;
  • Varlamov, Sergey (University of New South Wales, ARC Photovoltaics Center of Excellence)
  • 투고 : 2011.08.01
  • 심사 : 2011.08.23
  • 발행 : 2011.09.01
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초록

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

키워드

참고문헌

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