한국인터넷방송통신학회논문지 (The Journal of the Institute of Internet, Broadcasting and Communication)

  • 제11권6호
  • /
  • Pages.9-14
  • /
  • 2011
  • /
  • 2289-0238(pISSN)
  • /
  • 2289-0246(eISSN)
한국인터넷방송통신학회 (The Institute of Internet, Broadcasting and Communication)
권호 표지
DOI QR코드

DOI QR Code

금속산화 박막 전기소자의 전기적 특성 연구

A Study on the Electrical Properties of Transition Metal Oxides Thin Film Device

  • 최성재 (경원대학교 IT대학 전자통신공학부 전자공학과)
  • 투고 : 2011.10.19
  • 심사 : 2011.12.16
  • 발행 : 2011.12.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

$AlO_x$ 박막 소자를 제작하여 전기적 특성을 조사하였다. 소자는 Electrode를 Top-bottom구조로 제작하였으며 스위칭 특성을 연구하기 위해 전극간의 $AlO_x$ 박막의 전도특성이 측정되었다. 박막소자의 저항변화는 전압을 선형적으로 인가하여 측정하였다. 제작된 소자는 MIM구조로써 외부에서 인가하는 전기적 신호에 의하여 전기전도도가 큰 On-state와 전기전도도가 낮은 Off-state로 바뀌는 특성을 나타내었다. 본 연구에 사용된 $AlO_x$ 박막은 초기 저항 상태가 저저항 On 상태였으며, 전압을 인가함에 따라 저저항 On 상태와 고저항 Off 상태의 가역적 저항 변화 특성을 나타내었다. 본 연구를 통하여 $AlO_x$ 박막소자는 차세대 비휘발성 메모리로는 물론 다른 전기적 응용도 기대되는 물질임을 확인하게 되었다.

We have investigated the electrical properties of $AlO_x$ thin film device. The device has been fabricated top-bottom electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of $AlO_x$ thin film device. Fabricated $AlO_x$ thin film device with MIM structure is changed from a high conductive On-state to a low conductive Off-state by the external linear voltage sweep. It is found that the initial resistance of the $AlO_x$ thin film is low-resistance On state and reversible switching occurs. Consequently, we believe $AlO_x$ thin film is a promising material for a next-generation nonvolatile memory and other electrical applications.

키워드

참고문헌

  1. Yutaka Nishioka, Yutaka Kokaze, Koukou Suu, Hidenobu Matsumura, Hisashi Shima, Fumiyoshi Takano and Hiroyuki Akinaga, "遷移金属酸化物を用いた超大容量不揮発性メモリとその極微細加工プロセスに関する研究開発", Ulvac technical jurnal No.67E, 1, 2007
  2. 이동수, 심현준, 최두호, 황현상, "차세대 비휘발성 Oxide 저항변화 메모리(ReRAM)" 물리학과 첨단기술, September, 30, 2005
  3. 최성재, 이원식, " 이성분계 금속산화물의 물성연구",한국인터넷방송통신학회춘계학술대회논문집, p229-232, 2009
  4. D. S. Kim, C. E. Lee, Y. H. Kim,S. M. Jung and Y. T. Kim, "Growth and Characterization of Pr0.7Ca0.3MnO3 Thin Films for Resistance Random Access Memory", Journal of the Korean Physical Society, 49, S557, 2006
  5. M. Villafuerte, G. Juarez, S. Duhalde, F. Golmar, C. L. Degreef and S. P. Heluani, "Resistance switching induced by electric fields in manganite thin films", Journal of Physics: Conference Series 59, 483, 2007 https://doi.org/10.1088/1742-6596/59/1/104
  6. Sanghee Won, Seunghee Go, Kwanwoo Lee, and Jaegab Lee, "Resistive Switching Properties of Pt/TiO2/n+-Si ReRAM for Nonvolatile Memory Application", Electronic Materials Letters, 4(1), 29, 2008
  7. S. Kato, S. Nigo, J. W. Lee, M. Mihalik, H. Kitazawa and G. Kido, "Transport Properties of Anodic Porous Alumina for ReRAM", Journal of Physics: Conference Series 109, 012017, 2008 https://doi.org/10.1088/1742-6596/109/1/012017
  8. Sanghee Won, Seunghee Go, Jaegab Lee, "Resistive switching characteristics in TiO2 ReRAM with top electrode of Co selectively formed on SAMs printed patterns", Solid State Phenomena 124, 603, 2007
  9. 최성재, 이원식, "산화금속의 전기적 스위칭 특성연구", 한국인터넷방송통신학회논문지, 9권3호, p173-178, 2009
  10. Dongsoo Lee, Hyejung Choi, Hyunjun Sim, Dooho Choi, Hyunsang Hwang, Myoung-Jae Lee, Sun-Ae Seo, and I. K. Yoo, "Resistance Switching of the Nonstoichiometric Zirconium Oxide for Nonvolatile Memory Applications", IEEE ELECTRON DEVICE LETTERS, VOL. 26, NO. 9, 719, 2005 https://doi.org/10.1109/LED.2005.854397
  11. C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J-S Zhao, and C. S. Hwang, "Identification of a determining parameter for resistive switching of TiO2 thin films", Appl. Phys .Lett. vol86, 262907, 2005 https://doi.org/10.1063/1.1968416
  12. M. Villafuerte, S. P. Heluani, G. Juarez, and G. Simonelli, "Electric-pulse-induced reversible resistance in doped zinc oxide thin films", Appl. Phys. Lett. vol 90, 052105, 2007 https://doi.org/10.1063/1.2437688
  13. J. C. Bruyere and B. K. Chakraverty, "Switching and Negative Resistance in Thin Films of Nickel Oxide", Appl. Phys. Lett. vol 16, 40, 1970 https://doi.org/10.1063/1.1653024
  14. I. H. Inoue, S.Yasuda, H.Akinaga, and H. Takagi, "Nonpolar resistance switching of metal/ binary-transition-metal oxides/metal sandwiches: Homogeneous/inhimogeneous transition of current distribution", PHYSICAL REVIEW B 77, 035105, 2008 https://doi.org/10.1103/PhysRevB.77.035105
  15. Kyooho jung, Joonnhyuk choi, Yongmin Kim, Hyunsik Im, "Resistance switching characteristics in Li-doped NiO", J. Appl. Phys. Vol 103, 1, 2008
  16. Jae-Hoon Song, Yongmin Kim, Kyooho Jung, Hyunsik Im, WoongJung and Hyungsang Kim, "Reversible resistance switching characteristics in $AlO_{x}$ films grown using sputtering", New Physics, 59(1), 90, 2009