참고문헌
- Yutaka Nishioka, Yutaka Kokaze, Koukou Suu, Hidenobu Matsumura, Hisashi Shima, Fumiyoshi Takano and Hiroyuki Akinaga, "遷移金属酸化物を用いた超大容量不揮発性メモリとその極微細加工プロセスに関する研究開発", Ulvac technical jurnal No.67E, 1, 2007
- 이동수, 심현준, 최두호, 황현상, "차세대 비휘발성 Oxide 저항변화 메모리(ReRAM)" 물리학과 첨단기술, September, 30, 2005
- 최성재, 이원식, " 이성분계 금속산화물의 물성연구",한국인터넷방송통신학회춘계학술대회논문집, p229-232, 2009
- D. S. Kim, C. E. Lee, Y. H. Kim,S. M. Jung and Y. T. Kim, "Growth and Characterization of Pr0.7Ca0.3MnO3 Thin Films for Resistance Random Access Memory", Journal of the Korean Physical Society, 49, S557, 2006
- M. Villafuerte, G. Juarez, S. Duhalde, F. Golmar, C. L. Degreef and S. P. Heluani, "Resistance switching induced by electric fields in manganite thin films", Journal of Physics: Conference Series 59, 483, 2007 https://doi.org/10.1088/1742-6596/59/1/104
- Sanghee Won, Seunghee Go, Kwanwoo Lee, and Jaegab Lee, "Resistive Switching Properties of Pt/TiO2/n+-Si ReRAM for Nonvolatile Memory Application", Electronic Materials Letters, 4(1), 29, 2008
- S. Kato, S. Nigo, J. W. Lee, M. Mihalik, H. Kitazawa and G. Kido, "Transport Properties of Anodic Porous Alumina for ReRAM", Journal of Physics: Conference Series 109, 012017, 2008 https://doi.org/10.1088/1742-6596/109/1/012017
- Sanghee Won, Seunghee Go, Jaegab Lee, "Resistive switching characteristics in TiO2 ReRAM with top electrode of Co selectively formed on SAMs printed patterns", Solid State Phenomena 124, 603, 2007
- 최성재, 이원식, "산화금속의 전기적 스위칭 특성연구", 한국인터넷방송통신학회논문지, 9권3호, p173-178, 2009
- Dongsoo Lee, Hyejung Choi, Hyunjun Sim, Dooho Choi, Hyunsang Hwang, Myoung-Jae Lee, Sun-Ae Seo, and I. K. Yoo, "Resistance Switching of the Nonstoichiometric Zirconium Oxide for Nonvolatile Memory Applications", IEEE ELECTRON DEVICE LETTERS, VOL. 26, NO. 9, 719, 2005 https://doi.org/10.1109/LED.2005.854397
- C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J-S Zhao, and C. S. Hwang, "Identification of a determining parameter for resistive switching of TiO2 thin films", Appl. Phys .Lett. vol86, 262907, 2005 https://doi.org/10.1063/1.1968416
- M. Villafuerte, S. P. Heluani, G. Juarez, and G. Simonelli, "Electric-pulse-induced reversible resistance in doped zinc oxide thin films", Appl. Phys. Lett. vol 90, 052105, 2007 https://doi.org/10.1063/1.2437688
- J. C. Bruyere and B. K. Chakraverty, "Switching and Negative Resistance in Thin Films of Nickel Oxide", Appl. Phys. Lett. vol 16, 40, 1970 https://doi.org/10.1063/1.1653024
- I. H. Inoue, S.Yasuda, H.Akinaga, and H. Takagi, "Nonpolar resistance switching of metal/ binary-transition-metal oxides/metal sandwiches: Homogeneous/inhimogeneous transition of current distribution", PHYSICAL REVIEW B 77, 035105, 2008 https://doi.org/10.1103/PhysRevB.77.035105
- Kyooho jung, Joonnhyuk choi, Yongmin Kim, Hyunsik Im, "Resistance switching characteristics in Li-doped NiO", J. Appl. Phys. Vol 103, 1, 2008
-
Jae-Hoon Song, Yongmin Kim, Kyooho Jung, Hyunsik Im, WoongJung and Hyungsang Kim, "Reversible resistance switching characteristics in
$AlO_{x}$ films grown using sputtering", New Physics, 59(1), 90, 2009